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SI2305CDS-T1-GE3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Vishay Siliconix
Si2305CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
=25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 2 A, T
J
= 25 °C
I
D
= 4.4 A, T
J
= 25 °C
I
D
= 2 A, T
J
= 125 °C
I
D
= 4.4 A, T
J
= 125 °C
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10
0.01
10
I
D
- Drain Current (A)
0.1
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS
Limited
DC
1 s, 10 s
100 ms
10 ms
1 ms
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
5
Vishay Siliconix
Si2305CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
D
- Drain Current (A)
I
Power, Junction-to-Case
0.0
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Vishay Siliconix
Si2305CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64847
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=175 °C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.02
Single Pulse
0.1
0.2
0.05
P1-P3P4-P6P7-P9P10-P10

SI2305CDS-T1-GE3

Mfr. #:
Buy SI2305CDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -8V Vds 8V Vgs SOT-23
Lifecycle:
New from this manufacturer.
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