NTD5862NT4G Datasheet NTD5862NT4G, NTD5862N-1G | P1-P3

January, 2015 − Rev. 4

1 Publication Order Number:

NTD5862N/D

NTD5862N, NTP5862N

N-Channel Power MOSFET

60 V, 98 A, 5.7 mW

Features

• Low R

DS(on)

• High Current Capability

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 V

Gate−to−Source Voltage − Continuous V

GS

±20 V

Gate−to−Source Voltage

− Non−Repetitive (t

p

< 10 ms)

V

GS

±30 V

Continuous Drain

Current (R

q

JC

)

(Note 1)

Stead

y

State

T

C

= 25°C

I

D

98

A

T

C

= 100°C 69

Power Dissipation

(R

q

JC

)

T

C

= 25°C P

D

115 W

Pulsed Drain Current

t

p

= 10 ms

I

DM

335 A

Operating Junction and Storage Temperature T

J

, T

stg

−55 to

175

°C

Source Current (Body Diode) I

S

96 A

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.3 mH)

E

AS

205 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

R

q

JC

1.3

°C/W

Junction−to−Ambient − Steady State (Note 2)

R

q

JA

37

1. Limited by package to 50 A continuous.

2. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces.

DPAK

CASE 369C

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENT

60 V

R

DS(on)

MAX I

D

MAXV

(BR)DSS

5.7 mW @ 10 V

www.onsemi.com

1

2

3

4

See detailed ordering and shipping information on page 5 o

f

this data sheet.

ORDERING INFORMATION

1

Gate

2

Drain

3

Source

4

Drain

AYWW

58

62NG

A = Assembly Location*

Y = Year

WW = Work Week

5862N = Device Code

G = Pb−Free Package

G

S

N−Channel

D

IPAK

CASE 369D

STYLE 2

1

2

3

4

Drain

2

Drain

1

Gate

3

Source

AYWW

58

62NG

98 A

NTP

5862NG

AYWW

1

Gate

3

Sour

ce

4

Drain

2

Drain

1

2

3

4

TO−220

CASE 221A

STYLE 5

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

NTD5862N, NTP5862N

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

47 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 60 V

T

J

= 25°C 1.0 mA

T

J

= 150°C 100

Gate−to−Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

2.0 4.0 V

Threshold Temperature Coefficient V

GS(TH)

/T

J

−9.7 mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 10 V, I

D

= 45 A 4.4 5.7

mW

Forward Transconductance gFS V

DS

= 15 V, I

D

= 10 A 18 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

C

iss

V

GS

= 0 V, f = 1.0 MHz,

V

DS

= 25 V

5050 6000

pF

Output Capacitance C

oss

500 600

Reverse Transfer Capacitance C

rss

300 420

Total Gate Charge Q

G(TOT)

V

GS

= 10 V, V

DS

= 48 V,

I

D

= 45 A

82

nC

Threshold Gate Charge Q

G(TH)

5.2

Gate−to−Source Charge Q

GS

24

Gate−to−Drain Charge Q

GD

27

Gate Resistance R

G

0.6

W

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(on)

V

GS

= 10 V, V

DD

= 48 V,

I

D

= 45 A, R

G

= 2.5 W

18

ns

Rise Time t

r

70

Turn−Off Delay Time t

d(off)

35

Fall Time t

f

60

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

V

GS

= 0 V,

I

S

= 45 A

T

J

= 25°C 0.9 1.2

V

T

J

= 100°C 0.75

Reverse Recovery Time t

RR

V

GS

= 0 V, dIs/dt = 100 A/ms,

I

S

= 45 A

38

ns

Charge Time ta 20

Discharge Time tb 18

Reverse Recovery Charge Q

RR

40 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD5862N, NTP5862N

www.onsemi.com

3

TYPICAL CHARACTERISTICS

0

40

80

120

160

200

012345

Figure 1. On−Region Characteristics

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

6.0 V

V

GS

= 10 V

5.8 V

5.6 V

5.2 V

T

J

= 25°C

0

20

40

60

80

100

120

140

160

34567

V

DS

≥ 5 V

T

J

= 25°C

T

J

= −55°C

T

J

= 125°C

Figure 2. Transfer Characteristics

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

0.010

0.015

0.020

0.025

0.030

0.000

0.005

45678910

Figure 3. On−Resistance vs. Gate Voltage

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

I

D

= 45 A

T

J

= 25°C

0.003

0.004

0.005

0.006

10 20 30 40 50 60 70 80

Figure 4. On−Resistance vs. Drain Current

I

D

, DRAIN CURRENT (A)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

V

GS

= 10 V

T

J

= 25°C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.2

−50 −25 0 25 50 75 100 125 150

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

V

GS

= 10 V

I

D

= 45 A

1000

10000

100000

10 20 30 40 50 60

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

DSS

, LEAKAGE (nA)

T

J

= 125°C

T

J

= 150°C

V

GS

= 0 V

6.2 V

180

200

90 100

2.0

175

NTD5862NT4G

NTD5862NT4G

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