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NTD5862NT4G

P1-P3P4-P6P7-P7
NTD5862N, NTP5862N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0
1000
2000
3000
4000
5000
6000
0 102030405060
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
0
2
4
6
8
10
01020304050
Q
gs
Q
T
Q
gd
Figure 8. Gate−to−Source vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
= 48 V
I
D
= 45 A
T
J
= 25°C
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 48 V
I
D
= 45 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
0
20
40
60
80
100
0.50 0.60 0.70 0.80 1.000.90 1.1
0
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
0.1
1
10
100
1000
0.1 1 10 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
10 ms
100 ms
10 ms
dc
1 ms
0
25
50
75
100
125
150
175
25 50 75 100 125 17
5
AVALANCHE ENERGY (mJ)
T
J
, STARTING JUNCTION TEMPERATURE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I
D
= 37 A
60 70 80 9
0
1
3
5
7
9
150
200
225
NTD5862N, NTP5862N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0.001
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
Figure 13. Thermal Response
t, PULSE TIME (s)
R
q
JC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
10
0.01
ORDERING INFORMATION
Order Number Package Shipping
†
NTD5862N−1G IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5862NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTP5862NG TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD5862N, NTP5862N
www.onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
123
4
V
S
A
K
−T−
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G
0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z 0.155 −−− 3.93 −−−
IPAK
CASE 369D
ISSUE C
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P1-P3P4-P6P7-P7

NTD5862NT4G

Mfr. #:
Buy NTD5862NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 102A 6MOHM
Lifecycle:
New from this manufacturer.
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