FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
Memory FRAM
1 M Bit (128 K × 8)
MB85R1001A
■ DESCRIPTIONS
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072
words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
process technologies.
The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001A can be used for 10
10
read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E
2
PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration : 131,072 words × 8 bits
• Read/write endurance : 10
10
times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : − 40 °C to + 85 °C
• Data retention : 10 years ( + 55 °C)
• Package : 48-pin plastic TSOP (1)
DS501-00003-1v0-E
