MB85R1001A
4 DS501-00003-1v0-E
ABSOLUTE MAXIMUM RATINGS
* : All voltages are referenced to VSS = 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
* : All voltages are referenced to VSS = 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
Parameter Symbol
Rating
Unit
Min Max
Power Supply Voltage* V
CC 0.5 + 4.0 V
Input Pin Voltage* V
IN 0.5 VCC + 0.5 ( 4.0) V
Output Pin Voltage* V
OUT 0.5 VCC + 0.5 ( 4.0) V
Operating Temperature TA 40 + 85 °C
Storage Temperature T
STG 40 + 125 °C
Parameter Symbol
Value
Unit
Min Typ Max
Power Supply Voltage* V
CC 3.0 3.3 3.6 V
High Level Input Voltage* V
IH VCC × 0.8 VCC + 0.5( 4.0) V
Low Level Input Voltage* V
IL 0.5 + 0.6 V
Operating Temperature TA 40 + 85 °C
MB85R1001A
DS501-00003-1v0-E 5
ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
*1 : During the measurement of I
CC, the Address, Data In were taken to only change once per active cycle.
I
out: output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H VCC 0.2 V, L 0.2 V.
Parameter Symbol Condition
Value
Unit
Min Typ Max
Input Leakage Current |I
LI| VIN = 0 V to VCC ⎯⎯10 μA
Output Leakage Current |I
LO|
VOUT = 0 V to VCC,
CE
1 = VIH or OE = VIH
⎯⎯10 μA
Operating Power Supply
Current
ICC
CE1 = 0.2 V, CE2 = VCC0.2 V,
I
out = 0 mA*
1
10 15 mA
Standby Current I
SB
CE1 VCC0.2 V
10 50 μACE2 0.2 V*
2
OE VCC0.2 V, WE VCC0.2 V*
2
High Level Output Voltage VOH IOH = 1.0 mA
VCC ×
0.8
⎯⎯V
Low Level Output Voltage V
OL IOL = 2.0 mA ⎯⎯0.4 V
MB85R1001A
6 DS501-00003-1v0-E
2. AC Characteristics
AC Test Conditions
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : 40 °C to +85 °C
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 5 ns
Input Falling Time : 5 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Cycle
(within recommended operating conditions)
(2) Write Cycle
(within recommended operating conditions)
Parameter Symbol
Value
Unit
Min Max
Read Cycle Time tRC 150 ns
CE
1 Active Time tCA1 120 ns
CE2 Active Time t
CA2 120 ns
OE
Active Time tRP 120 ns
Precharge Time t
PC 20 ns
Address Setup Time t
AS 0 ns
Address Hold Time t
AH 50 ns
OE
Setup Time tES 0 ns
Output Hold Time t
OH 0 ns
Output Set Time t
LZ 30 ns
CE
1 Access Time tCE1 100 ns
CE2 Access Time t
CE2 100 ns
OE
Access Time tOE 100 ns
Output Floating Time t
OHZ 20 ns
Parameter Symbol
Value
Unit
Min Max
Write Cycle Time t
WC 150 ns
CE
1 Active Time tCA1 120 ns
CE2 Active Time t
CA2 120 ns
Precharge Time t
PC 20 ns
Address Setup Time t
AS 0 ns
Address Hold Time t
AH 50 ns
Write Pulse Width t
WP 120 ns
Data Setup Time t
DS 0 ns
Data Hold Time t
DH 50 ns
Write Setup Time t
WS 0 ns

MB85R1001ANC-GE1

Mfr. #:
Manufacturer:
Fujitsu
Description:
IC FRAM 1M PARALLEL 48TSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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