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THBT27011DRL

P1-P3P4-P6P7-P9P10-P11
December 2010 Doc ID 3767 Rev 9 1/11
11
THBT15011, THBT20011, THBT27011
Tripolar overvoltage protection for telecom line
Features
■ bidirectional crowbar protection between TIP
and GND, RING and GND and between TIP
and RING
■ peak pulse current:
I
PP
= 30 A for 10/1000 µs surge
■ holding current: I
H
= 150 mA
Complies with Bellcore standard
■ TR-NWT-001089-Core, (second level) with line
series resistors:
– 10/1000 µs, 1000 V
– 2/10 µs, 2500 V (first level)
– 2/10 µs, 5000 V
Description
Dedicated to telecommunication equipment
protection, these devices provide a triple
bidirectional protection function.
They ensure the same protection capability with
the same breakdown voltage both in longitudinal
mode and transversal mode.
A particular attention has been given to the
internal wire bonding. The “4-point” configuration
ensures a reliable protection, eliminating
overvoltages introduced by the parasitic
inductances of the wiring (Ldi/dt), especially for
very fast transient overvoltages.
Dynamic characteristics have been defined for
several types of surges to meet the SLIC
maximum ratings.
Figure 1. Schematic diagram
SO-8
2
GND
3
GND
1
TIP
4
RING
7
GND
6
GND
8
TIP
5
RING
www.st.com
Characteristics THBT15011, THBT20011, THBT27011
2/11 Doc ID 3767 Rev 9
1 Characteristics
Figure 2. Pulse waveform
Figure 3. Surge peak current versus overload duration
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
I
PP
Peak pulse current
(1)
(2)
1. For pulse waveform see Figure 2
2. See Figure 7: Test circuit 4 for I
PP
parameter
10 / 1000 µs 30 A
I
TSM
Non repetitive surge peak on-state current
(F = 50 Hz)
t
p
= 10 ms
t = 1 s
8
3.5
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 40 to + 150
150
°C
T
L
Maximum lead temperature for soldering during 10s 260 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient 170 °C/W
10 0
50
%I
PP
t
t
r
p
0
t
Repetitive peak pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
0
1
2
3
4
5
6
7
8
9
10
I (A)TSM
F=50Hz
Tj initial=25°C
t(s)
THBT15011, THBT20011, THBT27011 Characteristics
Doc ID 3767 Rev 9 3/11
Table 3. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
I
RM
Leakage current at stand-off voltage
V
R
Continuos reverse voltage
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
H
Holding current
I
BO
Breakover current
V
F
Forward voltage drop
I
PP
Peak pulse current
C Capacitance
V
I
I
H
I
BO
V
RM
V
BR
BO
V
PP
I
R
I
Table 4. Static parameters
Order code
I
RM
@ V
RM
I
R
(1)
@ V
R
V
BO
(2)
@ I
BO
I
H
(3)
C
(4)
max. max. max. min. max. min. max.
µA V µA V V V mA mA pF
THBT15011D 5 135 50 150 210 50 400 150 80
THBT20011D 5 180 50 200 290 50 400 150 80
THBT27011D 5 240 50 270 380 50 400 150 80
1. I
R
measured at V
R
guarantee V
BR
min ≥ V
R
2. Measured at 50 Hz (1 cycle) - See Figure 4: Test circuit 1 for IBO and VBO parameters.
3. See Figure 5: Test circuit 2 for dynamic IH parameter.
4. V
R
= 1 V, F = 1 MHz.
Table 5. Dynamic breakover voltages (transversal mode)
Type Symbol Test conditions
(1)
Max Unit
THBT15011D V
BO
10/700 µs
1.2/50 µs
2/10μs
1.5 kV
1.5 kV
2.5 kV
R
p
= 10 Ω
R
p
= 10 Ω
R
p
= 62 Ω
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
190
190
200
V
THBT20011D V
BO
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
R
p
= 10 Ω
R
p
= 10 Ω
R
p
= 62 Ω
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
270
270
280
V
THBT27011D V
BO
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
R
p
= 10 Ω
R
p
= 10 Ω
R
p
= 62 Ω
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
360
360
400
V
1. See Figure 6: Test circuit 3 for V
BO
parameters. R
p
is the protection resistor located on the line card.
P1-P3P4-P6P7-P9P10-P11

THBT27011DRL

Mfr. #:
Buy THBT27011DRL
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 270V 50uA OV Prot
Lifecycle:
New from this manufacturer.
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