THBT27011DRL

Test circuits THBT15011, THBT20011, THBT27011
4/11 Doc ID 3767 Rev 9
2 Test circuits
2.1 Test procedure for test circuit 1 for I
BO
and V
BO
parameters
Figure 4. Test circuit 1 for I
BO
and V
BO
parameters
Pulse test duration (t
p
= 20 ms):
For bidirectional devices switch K is closed.
For unidirectional devices switch K is open.
V
OUT
selection:
For device with V
BO
< 200 V, V
OUT
= 250 V
RMS
, R1 = 140 Ω.
For device with V
BO
200 V, V
OUT
= 480 V
RMS
, R2 = 240 Ω.
2.2 Test procedure for test circuit 2 for dynamic I
H
parameter
Figure 5. Test circuit 2 for dynamic I
H
parameter
This is a go no-go test, which can confirm the holding current (I
H
) level.
Procedure
1. Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2. Fire the D.U.T. with a surge current I
PP
= 10A, 10/1000µs.
3. The D.U.T. will come back off-state within 50 ms maximum.
220V 50Hz
1/4
R1 = 140Ω
R2 = 240Ω
K
ton = 20ms
IBO
measurement
VBO
measurement
Vout
DUT
R
V
BAT
= - 48 V
Surge generator
D.U.T
THBT15011, THBT20011, THBT27011 Test circuits
Doc ID 3767 Rev 9 5/11
2.3 Test circuit 3 for V
BO
parameters
Figure 6. Test circuit 3 for V
BO
parameters
2.4 Test circuit 4 for I
PP
parameter
Figure 7. Test circuit 4 for I
PP
parameter
Table 6. Parameters for test crcuit 3 for selected pulse characteristics
Pulse (µs)
V
p
(V)
C
1
(µF)
C
2
(nF)
L
(µH)
R
1
(Ω)
R
2
(Ω)
R
3
(Ω)
R
4
(Ω)
I
PP
(A)
R
p
(Ω)
t
r
t
p
107001500202000 501525253010
1.25015001 33 0 761325253010
2 10 2500 10 0 1.1 1.3 0 3 3 38 62
CC
R
R
TIP
RING
GND
V
P
4
3
2
R
2
R
1
L
1
(V is defined in no load condition)P
Longitudinal mode
THBT
See test
circuit 3
R
P
TIP
RING
GND
I
PP
/2
R
P
I
PP
/2
Transversal mode
TIP or
RING
GND
THBT
R
P
I
PP
See test
circuit 3
Application information THBT15011, THBT20011, THBT27011
6/11 Doc ID 3767 Rev 9
3 Application information
Figure 8. Device connections
Connect pins 2, 3, 6 and 7 to ground to guarantee a good surge current capability for long
duration disturbances.
To take advantage of the “4-point” structure of the THBT, the TIP and RING lines have to
cross the device. In this case, the device will eliminate the overvoltages generated by the
parasitic inductances of the wiring (Ldi/dt), especially for very fast transients.
3.1 Application circuits
Figure 9. Line card protection
1
2
4
3
8
7
5
6
TIP
GND
RING
TIP
GND
RING
RING
RELAY
RING
GENERATOR
PTC
PTC
LINE A
LINE B
THBTxxxD
LCP1511D
SLIC
T
E
S
T
R
E
L
A
Y
-V
BAT
220
nF
S

THBT27011DRL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 270V 50uA OV Prot
Lifecycle:
New from this manufacturer.
Delivery:
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