2007-04-20
BFP620F
1
1
2
4
3
NPN Silicon Germanium RF Transistor*
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
• Gold metallization for extra high reliability
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
* Short term description
1
34
2
Direction of Unreeling
Top View
XYs
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620F R2s
1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
≤ 0 °C
V
CEO
2.3
2.1
V
Collector-emitter voltage V
CES
7.5
Collector-base voltage V
CBO
7.5
Emitter-base voltage V
EBO
1.2
Collector current I
C
80 mA
Base current I
B
3
Total power dissipation
2)
T
S
≤ 96°C
P
tot
185 mW
Junction temperature T
150 °C
Ambient temperature T
-65 ... 150
Storage temperature T
st
-65 ... 150
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
