OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BFP 620F E7764

P1-P3P4-P6P7-P9P10-P10
2007-04-20
BFP620F
4
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
0.22 fA
VAF =
1000 V
NE =
2-
VAR =
2V
NC =
2-
RBM =
2.707
Ω
CJE =
250.7 fF
TF =
1.43 ps
ITF =
2.4 A
VJC =
0.6 V
TR =
0.2 ns
MJS =
0.5 -
XTI =
3-
AF = 2 -
TITF1 -0.0065 -
BF = 425
-
IKF = 0.25
A
BR = 50
-
IKR = 10
mA
RB = 3.129
Ω
RE = 0.6
-
VJE = 0.75
V
XTF = 10
-
PTF = 0
deg
MJC = 0.5
-
CJS = 128.1
fF
NK = -1.42
-
FC = 0.8
KF = 7.291E-11
TITF2 1.0E-5
NF =
1.025 -
ISE =
21 fA
NR =
1-
ISC =
18 pA
IRB =
1.522 mA
RC =
2.364
Ω
MJE =
0.3 -
VTF =
1.5 V
CJC =
124.9 fF
XCJC =
1-
VJS =
0.52 V
EG =
1.078 eV
TNOM
298 K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L
B0
=
0.22
nH
L
E0
=
0.28
nH
L
C0
=
0.22
nH
K
B0-E0
= 0.1 -
K
B0-C0
= 0.01 -
K
E0-C0
= 0.11 -
C
BE
=
34
fF
C
BC
=
2
fF
C
CE
=
33
fF
L
BI
=
0.42
nH
R
LBI
=
0.15
Ω
L
EI
=
0.26
nH
R
LEI
=
0.11
Ω
L
CI
= 0.35 nH
R
LI = 0.13 Ω
K
BI-EI
=
-0.05
-
K
BI-CI
= -0.08 -
K
EI-
C
I
= 0.2 -
Valid up to 6GHz
To avoid high complexity of the package equivalent circuit,
both emitter leads of
TSFP-4 are combined in one electrical
connection.
R
LxI
are series resistors for the inductances L
xI
and
K
xa-yb
are the coupling coefficients between the
inductances
L
xa
and L
yb
.
2007-04-20
BFP620F
5
Total power dissipation P
tot
= ƒ(T
S
)
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
20
40
60
80
100
120
140
160
mW
200
P
tot
Permissible Pulse Load R
thJS
= ƒ(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= ƒ(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance C
cb
= ƒ(V
CB
)
f = 1MHz
0 1 2 3 4 5 6
V
8
V
CB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
C
CB
2007-04-20
BFP620F
6
Third order Intercept Point IP
3
=ƒ(I
C
)
(Output, Z
S
=Z
L
=50Ω)
V
CE
= parameter, f =1.8GHz
0 10 20 30 40 50 60 70
mA
90
I
C
-5
0
5
10
15
20
dBm
30
IP
3
0.8V
1.1V
1.4V
1.7V
2.3V
Transition frequency f
T
= ƒ(I
C
)
f = 1GHz
V
CE
= Parameter in V
0 10 20 30 40 50 60 70 80
mA
100
I
C
0
5
10
15
20
25
30
35
40
45
50
55
60
GHz
70
f
T
1 to 2.3
0.8
0.5
0.3
Power gain G
ma
, G
ms
= ƒ(I
C
)
V
CE
= 1.5V
f = Parameter in GHz
0 10 20 30 40 50 60 70
mA
90
I
C
6
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power Gain G
ma
, G
ms
= ƒ(f),
|S
21
|² = f (f)
V
CE
= 1.5V, I
C
= 50mA
0 1 2 3 4
GHz
6
f
5
10
15
20
25
30
35
40
dB
50
G
Gms
Gma
|S21|²
P1-P3P4-P6P7-P9P10-P10

BFP 620F E7764

Mfr. #:
Buy BFP 620F E7764
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors GP BJT NPN 2.3V 0.08A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet