IRF7321D2PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
––– 0.042 0.062 V
GS
= -10V, I
D
= -4.9A
––– 0.076 0.098 V
GS
= -4.5V, I
D
= -3.6A
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance ––– 7.7 ––– S V
DS
= -15V, I
D
= -4.9A
––– ––– -1.0 V
DS
= -24V, V
GS
= 0V
––– ––– -25 V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= 20V
Q
g
Total Gate Charge ––– 23 34 I
D
= -4.9A
Q
gs
Gate-to-Source Charge ––– 3.8 5.7 nC V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 V
GS
= -10V, See Fig. 6
t
d(on)
Turn-On Delay Time ––– 13 19 V
DD
= -15V
t
r
Rise Time ––– 13 20 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 34 51 R
G
= 6.0Ω
t
f
Fall Time ––– 32 48 R
D
= 15Ω,
C
iss
Input Capacitance ––– 710 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 380 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current(Body Diode) ––– ––– -2.5
I
SM
Pulsed Source Current (Body Diode) ––– ––– -30
V
SD
Body Diode Forward Voltage ––– -0.78 -1.0 V T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode) ––– 44 66 ns T
J
= 25°C, I
F
= -1.7A
Q
rr
Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs
A
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25°C
2.0 See Fig.14 Tc = 70°C
I
SM
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Maximum Ratings
A
Parameter Max. Units Conditions
Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
0.77 If = 6.0, Tj = 25°C
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C .
Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C
37 Tj = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
Schottky Diode Electrical Specifications
V
mA
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
