IRF7321D2PbF
4 www.irf.com
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
V
GS
= 0V f = 1 MHz
Ciss = Cgs + Cgd + Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.9A
V =-15V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
Power Mosfet Characteristics