©2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specifie
RFD10P03L, RFD10P03LSM,
RFP10P03L UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30 V
Drain to Gate Voltage (R
GS
= 20K
Ω)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
10 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
10
See Figure 5
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65
0.43
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.063in (1.6mm) from case for 10s)
300
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250
µ
A, V
GS
= 0V (Figure 11) -30 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 12) -1 - -2 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= -30V, T
C
= 25
o
C---1
µ
A
V
GS
= 0V T
C
= 150
o
C - - -50
µ
A
Gate to Source Leakage Current I
GSS
V
GS
=
±
10V - -
±
100 nA
Drain to Source On Resistance
(Note 1)
r
DS(ON)
I
D
= 10A, V
GS
= -5V (Figures 9, 10) - - 0.200
Ω
I
D
= 10A, V
GS
= -4.5V (Figures 9, 10) 0.220
Ω
Turn-On Time t
ON
V
DD
= 15V, I
D
≅
10A, R
L
= 1.5
Ω
,
R
GS
= 5
Ω,
V
GS
= -5V
(Figure 13)
- - 100 ns
Turn-On Delay Time t
d(ON)
-15- ns
Rise Time t
r
-50- ns
Turn-Off Delay Time t
d(OFF)
-35- ns
Fall Time t
f
-20- ns
Turn-Off Time t
OFF
- - 80 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0 to -10V V
DD
= -24V, I
D
≅
10A,
R
L
= 2.4
Ω
I
g(REF)
= -0.25mA
(Figure 14)
-2530nC
Gate Charge at -5V Q
g(-5)
V
GS
= 0 to -5V - 13 16 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0 to -1V - 1.2 1.5 nC
Input Capacitance C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 15)
- 1035 - pF
Output Capacitance C
OSS
- 340 - pF
Reverse Transfer Capacitance C
RSS
-35-pF
Thermal Resistance, Junction to Case R
θ
JC
- - 2.30
o
C/W
Thermal Resistance, Junction to Ambient R
θ
JA
RFD10P03L, RFD10P03LSM - - 100
o
C/W
RFP10P03L 80
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Forward Voltage V
SD
I
SD
= -10A - - -1.5 V
Reverse Recovery Time t
rr
I
SD
= -10A, dI
SD
/dt = -100A/
µ
s--75ns
NOTE:
2. Pulse Test: Pulse width
≤
300
µ
s, Duty Cycle
≤
2%.
RFD10P03L, RFD10P03LSM, RFP10P03L
