©2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-50
-10
-1
0.01 0.1 1 10
t
AV
,
TIME IN AVALANCHE (ms)
I
AS
,
AVALANCHE CURRENT (A)
IF R ≠ 0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R = 0
0
0-1
-2
-3 -5
-10
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10V
-4
-20
-15
-25
-5
PULSE DURATION = 250µs
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
V
GS
= -4V
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -5V
0 -3.0 -4.5 -6.0-1.5
0
-10
175
o
C
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
-20
-25
-15
-5
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
r
DS(ON),
DRAIN TO SOURCE
0
100
200
300
400
-2 -4 -6 -8 -10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -20A
I
D
= -10A
I
D
= -5A
I
D
= -2.5A
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
NORMALIZED DRAIN TO SOURCE
2.0
0.5
0
-40 0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.0
80
1.5
160 200
-80
V
GS
= -5V, I
D
= -10A
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
1.2
1.0
0.9
0.8
-40 0 40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.1
80
BREAKDOWN VOLTAGE
-80 160 200
I
D
=- 250uA
RFD10P03L, RFD10P03LSM, RFP10P03L
