IXGP16N60B2 Datasheet IXGA16N60B2, IXGP16N60B2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 40 A

I

C110

T

C

= 110°C16 A

I

CM

T

C

= 25°C, 1ms 100 A

SSOA V

GE

= 15V, T

J

= 125°C, R

G

= 22Ω I

CM

= 32 A

(RBSOA) Clamped Inductive load V

CE

≤ ≤

≤ V

CES

P

C

T

C

= 25°C 150 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting Torque (TO-220) 1.13/10 Nm/lb.in.

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-263 2.5 g

TO-220 3.0 g

DS99141C(03/13)

HiPerFAST

TM

IGBTs

B2-Class High Speed

V

CES

= 600V

I

C110

= 16A

V

CE(sat)

≤≤

≤ 1.95V

IXGA16N60B2

IXGP16N60B2

t

fi(typ)

= 70ns

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

,V

GE

= 0V 15 μA

T

J

= 125°C 250 μA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 12A,

V

GE

= 15V, Note1 1.95 V

T

J

= 125°C 1.65 V

Features

z

Optimized for Low Conduction and

Switching Losses

z

Square RBSOA

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

G

C

E

TO-220AB (IXGP)

G

E

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2

IXGP16N60B2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(Clamp), T

J

or R

G

.

TO-263 (IXGA) Outline

Pins: 1 - Gate 2 - Drain

TO-220 (IXGP) Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 = Gate 2 = Collector

3 = Emitter

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 12A, V

CE

= 10V, Note 1 8 S

C

ies

675 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 60 pF

C

res

20 pF

Q

g(on)

24 nC

Q

ge

I

C

= 12A, V

GE

= 15V, V

CE

= 0.5 • V

CES

5 nC

Q

gc

13 nC

t

d(on)

18 ns

t

ri

20 ns

E

on

0.16 mJ

t

d(off)

73 ns

t

fi

70 ns

E

off

0.12 0.22 mJ

t

d(on)

17 ns

t

ri

20 ns

E

on

0.26 mJ

t

d(off)

140 ns

t

fi

125 ns

E

off

0.38 mJ

R

thJC

0.83 °C/W

R

thCK

TO-220 0.50 °C/W

Inductive load, T

J

= 125°C

I

C

= 12A, V

GE

= 15V

V

CE

= 400V, R

G

= 22Ω

Note 2

Inductive load, T

J

= 25°C

I

C

= 12A, V

GE

= 15V

V

CE

= 400V, R

G

= 22Ω

Note 2

IXGA16N60B2

IXGP16N60B2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

9V

8V

10V

7V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

8V

9V

11V

13V

12V

14V

10V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

4

8

12

16

20

24

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

9V

11V

8V

6V

10V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 12A

I

C

= 6A

I

C

= 24A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 24

A

T

J

= 25ºC

12

A

6

A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

456789101112

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGP16N60B2

IXGP16N60B2

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