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IXGP16N60B2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 22
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 12A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
20 30 40 50 60 70 80 90 100
R
G
- Ohms
E
off
- MilliJoules
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
100
110
120
130
140
150
160
170
180
190
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f i
- Nanoseconds
60
90
120
150
180
210
240
270
300
330
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
E
off
- MilliJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 22
Ω ,
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 22
Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
t
f i
- Nanoseconds
40
60
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 22
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
180
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
40
60
80
100
120
140
160
180
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 22
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 24A, 12A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
IXYS REF: IXG_16N60B2D1(3D)8-02-10
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
15
20
25
30
35
40
45
50
55
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
t
r i
- Nanoseconds
15
16
17
18
19
20
21
22
23
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 22
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
15
16
17
18
19
20
21
22
23
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 22
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r i
- Nanoseconds
10
15
20
25
30
35
40
45
50
55
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A
P1-P3P4-P6

IXGP16N60B2

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IGBT 600V 40A 150W TO220
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