BYV29-600_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 24 October 2007 2 of 8
NXP Semiconductors
BYV29-600
Rectifier diode ultrafast
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BYV29-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage square waveform; δ = 1.0; T
mb
≤ 100 °C - 600 V
I
F(AV)
average forward current square waveform; δ = 0.5; T
mb
≤ 120 °C-9A
I
FRM
repetitive peak forward current square waveform; δ = 0.5; T
mb
≤ 120 °C - 18 A
I
FSM
non-repetitive peak forward current t = 10 ms; sinusoidal waveform - 70 A
t = 8.3 ms; sinusoidal waveform - 77 A
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 150 °C
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
with heatsink compound;
see
Figure 1
- - 2.5 K/W
R
th(j-a)
thermal resistance from junction to ambient in free air - 60 - K/W
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
001aag913
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−3
10
−2
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
