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BYV29-600,127
P1-P3
P4-P6
P7-P9
BYV29-600_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 24 October 2007
3 of 8
NXP Semiconductors
BYV29-600
Rectifier diode ultrafast
6.
Characteristics
T
ab
le 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
P
arameter
Conditions
Min
Ty
p
Max
Unit
Static characteristics
V
F
f
orward v
oltage
I
F
= 8 A; T
j
= 150
°
C; see
Figure 2
-
0.97
1.11
V
I
F
= 8 A
-
1.12
1.25
V
I
F
= 20 A; see
Figure 2
-
1.31
1.45
V
I
R
re
verse current
V
R
= 600 V
-
2
50
µ
A
V
R
= 600 V
; T
j
= 100
°
C
-
0.1
0.35
mA
Dynamic characteristics
Q
r
recov
ered charge
I
F
=2At
oV
R
≥
30 V; dI
F
/
d
t=2
0A
/
µ
s;
see
Figure 3
-
4
07
0n
C
t
rr
re
verse reco
very time
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/
µ
s; see
Figure 3
-
5
06
0n
s
I
RM
peak re
verse reco
very
current
I
F
= 10 A to V
R
≥
30 V
;
dI
F
/
d
t=5
0A
/
µ
s; T
j
= 100
°
C;
see
Figure 3
-
3
5.5
A
V
FR
f
orward reco
very
voltage
I
F
= 10 A; dI
F
/
d
t=1
0A
/
µ
s;
see
Figure 4
-
3.2
-
V
(1)
T
j
= 150
°
C; typical values
(2)
T
j
= 150
°
C; maximum v
alues
(3)
T
j
=2
5
°
C; maximum values
Fig 2.
Forward current as a function of f
orward v
oltage
003aab482
0
5
10
15
20
25
0
0
.4
0
.8
1
.2
1
.6
V
F
(V)
I
F
(A)
(1)
(2)
(3)
BYV29-600_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 24 October 2007
4 of 8
NXP Semiconductors
BYV29-600
Rectifier diode ultrafast
Fig 3.
Rever
se recovery definitions
Fig 4.
Forward recovery definitions
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FR
V
F
I
F
V
F
I
F(A
V)
=I
F(RMS)
×√
δ
a = form f
actor = I
F(RMS)
/I
F(A
V)
Fig 5.
Forward po
wer dissipation as a function of
average f
orward current; square wavef
orm;
maximum v
alues
Fig 6.
Forward po
wer dissipation as a function of
average f
orward current; sinusoidal wavef
orm;
maximum v
alues
003aab480
0
5
10
15
20
0
5
10
15
I
F(
AV)
(A)
P
tot
(W)
δ
= 1
0.
5
0.
2
0.
1
003aab481
0
2
4
6
8
10
12
0369
I
F(
AV)
(A)
P
tot
(W)
a = 1.
57
1.
9
2.
2
2.
8
4.
0
BYV29-600_2
© NXP B.V
. 2007. All rights reserved.
Product data sheet
Rev
. 02 — 24 October 2007
5 of 8
NXP Semiconductors
BYV29-600
Rectifier diode ultrafast
7.
P
acka
g
e outline
Fig 7.
P
acka
ge outline SOD59 (2-lead T
O-220A
C)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD59
99-09-13
05-10-25
2-lead TO-220AC
D
D
1
q
P
L
12
L
1
b
1
e
Q
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
SOD59
UNIT
A
1
b
1
D
1
e
P
mm
5.08
qQ
DIMENSIONS (mm are the original dimensions)
A
b
D
c
L
2
(1)
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L
1
E
L
A
E
A
1
c
L
2
(1)
Note
1. Terminals in this zone are uncontrolled.
P1-P3
P4-P6
P7-P9
BYV29-600,127
Mfr. #:
Buy BYV29-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 9A
Lifecycle:
New from this manufacturer.
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