OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

64-8016

P1-P3P4-P6P7-P9P10-P12P13-P13
IRL1404Z
IRL1404ZS
IRL1404ZL
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 3.1mΩ
I
D
= 75A
6/1/04
www.irf.com 1
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
D
2
Pak
IRL1404ZS
TO-220AB
IRL1404Z
TO-262
IRL1404ZL
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.65 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
490
220
See Fig.12a, 12b, 15, 16
230
1.5
± 16
Max.
200
140
790
75
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
PD - 94804B
IRL1404Z/S/L
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L = 0.079mH, R
G
= 25Ω, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
S
D
G
S
D
G
El
ectr
i
ca
l Ch
aracter
i
st
i
cs
@ T
J
=
2
5
°C (
un
l
ess
ot
h
erw
i
se
spec
ifi
e
d)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e40––––––V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.034 ––– V/°C
––– 2.5 3.1
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 4.7
m
Ω
––– ––– 5.9
V
GS(th)
Gate Threshold Volta
e 1.4 ––– 2.7 V
g
fs Forward Transconductance 120 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e––––––-200
Q
g
Total Gate Char
g
e–––75110
Q
gs
Gate-to-Source Char
g
e–––28–––nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e–––40–––
t
d(on)
Turn-On Dela
y
Time ––– 19 –––
t
r
Rise Time ––– 180 –––
t
d(off)
Turn-Off Dela
y
Time ––– 30 ––– ns
t
f
Fall Time ––– 49 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 5080 –––
C
oss
Output Capacitance ––– 970 –––
C
rss
Reverse Transfer Capacitance ––– 570 ––– pF
C
oss
Output Capacitance ––– 3310 –––
C
oss
Output Capacitance ––– 870 –––
C
oss
eff.
Effective Output Capacitance ––– 1280 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 180
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 720
(
Bod
y
Diode
)
V
SD
Diode Forward Volta
g
e––––––1.3V
t
rr
Reverse Recover
y
Time –––2639ns
Q
rr
Reverse Recover
y
Char
g
e ––– 18 27 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 4.5V, I
D
= 40A
V
GS
= 5.0V, I
D
= 40A
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 5.0V
V
DD
= 20V
I
D
= 75A
R
G
= 4.0Ω
V
DS
= 10V, I
D
= 75A
I
D
= 75A
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 20V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
GS
= 16V
V
GS
= -16V
V
DS
= 32V
Conditions
V
GS
= 5.0V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
IRL1404Z/S/L
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
BOTTOM 3.0V
60µs PULSE WIDTH
Tj = 25°C
3.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
3.0V
VGS
TOP 10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
BOTTOM 3.0V
2 3 4 5 6 7 8 9 10
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
60µs PULSE WIDTH
0 50 100 150 200
I
D
,Drain-to-Source Current (A)
0
50
100
150
200
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
P1-P3P4-P6P7-P9P10-P12P13-P13

64-8016

Mfr. #:
Buy 64-8016
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 75A TO-220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet