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64-8016
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IRL1404Z/S/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.0
0.5
1.0
1.5
2.0
2.5
V
SD
, S
ource-to-
Drai
n Volt
age (V)
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
0
2
04
06
08
0
Q
G
Tot
al Gat
e Charge (nC
)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 75A
IRL1404Z/S/L
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Tem
perat
ure (°C
)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
1
, R
ectangular
Pul
se Durat
ion (
sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
c
tor D = t1
/t2
2. P
eak Tj =
P dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.185
0.000213
0.241
0.001234
0.227
0.021750
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°C
)
0
50
100
150
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Lim
it
ed By Package
IRL1404Z/S/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Tem
perat
ure (°C
)
0
100
200
300
400
500
600
700
800
900
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 16A
26A
BO
TTOM
7
5A
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emperatur
e ( °C
)
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
64-8016
Mfr. #:
Buy 64-8016
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 75A TO-220AB
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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