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SI1865DL-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si1865DL
Document Number: 71297
S10-1054-Rev. D, 03-May-10
www.vishay.com
1
Load Switch with Level-Shift
DESCRIPTION
The Si1865DL includes a p- and p-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DL operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 1.2 A.
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 215 mΩ Low R
DS(on)
TrenchFET
®
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• 2000 V ESD Protection On Input Switch, V
ON/OFF
• Adjustable Slew-Rate
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
APPLICATION CIRCUITS
The Si1865DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
devices saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
* Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.
PRODUCT SUMMARY
V
DS2
(V) R
DS(on)
(Ω)I
D
(A)
1.8 to 8
0.215 at V
IN
= 4.5 V ± 1.2
0.300 at V
IN
= 2.5 V ± 1.0
0.440 at V
IN
= 1.8 V ± 0.7
Si1865DL
V
OUT
GND
LOAD
V
IN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
C
o
C
i
Switching Variation
R2 at V
IN
= 2.5 V, R1 = 20 kΩ
0
4
8
12
16
20
02468 10
R2 (kΩ)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
r
t
d(on)
t
d(off)
t
f
e (µs)mi
T
Note: For R2 switching variations with other V
IN
/R1
combinations see Typical Characteristics
COMPONENTS
R1 Pull-Up Resistor Typical 10 kΩ to 1 mΩ*
R2 Optional Slew-Rate Control Typical 0 kΩ to 100 kΩ*
C1 Optional Slew-Rate Control Typical 1000 pF
www.vishay.com
2
Document Number: 71297
S10-1054-Rev. D, 03-May-10
Vishay Siliconix
Si1865DL
FUNCTIONAL BLOCK DIAGRAM
Notes:
a) Surface mounted on FR4 board.
b) V
IN
= 8 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
D2
SC70-6
Top View
6
4
1
2
3
5
S2
ON/OFF
R1, C1
D2
D2
R2
S2
ON/OFF
R2
1
4
6
5
Q1
Q2
Si1865DL
R1, C1
2, 3
Marking Code
VA XX
Lot Traceability
and Date Code
Part # Code
Y Y
Ordering Information: Si1865DL-T1-E3 (Lead (Pb)-free)
Si1865DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Input Voltage
V
IN
8
V
ON/OFF Voltage
V
ON/OFF
8
Load Current
Continuous
a, b
I
L
± 1.2
APulsed
b, c
± 3
Continuous Intrinsic Diode Conduction
a
I
S
- 0.4
Maximum Power Dissipation
a
P
D
0.4 W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω)
ESD
2kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (continuous current)
a
R
thJA
260 320
°C/W
Maximum Junction-to-Foot (Q2)
R
thJC
180 220
SPECIFICATIONS T
J
= 25 °C unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Reverse Leakage Current V
IN
V
IN
= 8 V, V
ON/OFF
= 0 V 1 µA
Diode Forward Voltage I
Q
l
S
= - 0.4 A 0.85 1.1 V
ON Characteristics
Input Volatge V
IN
1.8 8 V
On-Resistance (P-Channel) at 1 A
R
DS(on)
V
ON/OFF
= 1.5 , V
IN
= 4.5 V, I
D
= 1.2 A 0.180 0.215
Ω
V
ON/OFF
= 1.5 , V
IN
= 2.5 V, I
D
= 1.0 A 0.250 0.300
V
ON/OFF
= 1.5 , V
IN
= 1.8 V, I
D
= 0.7 A 0.367 0.440
On-State (P-Channel) Drain-Current I
D(on)
V
IN-OUT
≤ 0.2 V, V
IN
= 5 V, V
ON/OFF
= 1.5 A 1
A
V
IN-OUT
≤ 0.3 V, V
IN
= 3 V, V
ON/OFF
= 1.5 A 1
Document Number: 71297
S10-1054-Rev. D, 03-May-10
www.vishay.com
3
Vishay Siliconix
Si1865DL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
V
DROP
vs. I
L
at V
IN
= 4.5 V
V
DROP
vs. I
L
at V
IN
= 1.8 V
V
DROP
Variance vs. Junction Temperature
0.0
0.2
0.4
0.6
0
.
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
L
(A)
)
V
(
V
PORD
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.
8
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
L
(A)
)V
(V
PO
RD
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
- 0.10
- 0.06
- 0.02
0.02
0.06
0.10
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
)V( ecnaira
V
V
PO
RD
I
L
= 0.7 A
V
ON/OFF
= 1.5 V to 8 V
V
IN
= 4.5 V
V
IN
= 1.8 V
V
DROP
vs. I
L
at V
IN
= 2.5 V
V
DROP
vs. I
L
at I
L
= 0.7 V
On-Resistance vs. Input Voltage
I
L
(A)
) V ( V
PORD
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5
0.0
0.2
0.4
0.6
0.8
0123456
V
IN
(V)
) V
( V
PO
RD
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
0123456
-
(Ω)
ecna
ts
is
e
R
-
nO
R
)no(SS
V
IN
(V)
I
L
= 0.7 A
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
P1-P3P4-P6P7-P9P10-P10

SI1865DL-T1-GE3

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Manufacturer:
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Description:
MOSFET
Lifecycle:
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