TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized On-Resistance vs.
Junction Temperature
Switching Variation
R2 at V
IN
= 2.5 V, R1 = 20 kΩ
Switching Variation
R2 at V
IN
= 4.5 V, R1 = 300 kΩ
0.5
0.7
0.9
1.1
1.3
1
.5
- 50- 250255075100125150
- ecnatsiseR-nO R
)no(SD
T
J
- Junction Temperature (°C)
I
L
= 0.7 A
V
ON/OFF
= 1.5 V to 8V
V
IN
= 1.8V
V
IN
= 4.5 V
(Normalized)
0
4
8
12
16
20
0246810
R2 (kΩ)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
e (µs)
m
iT
t
r
t
d(on)
t
d(off)
t
f
0
40
80
120
160
200
020406080100
R2 (kΩ)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
e (µs)
m
iT
t
d(on)
t
r
t
d(off)
t
f
Switching Variation
R2 at V
IN
= 1.8 V, R1 = 20 kΩ
Switching Variation
R2 at V
IN
= 1.8 V, R1 = 20 kΩ
Switching Variation
R2 at V
IN
= 2.5 V, R1 = 300 kΩ
R2 (kΩ)
e (µs)miT
t
r
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
f
t
d(on)
t
d(off)
0
4
8
12
16
20
0246810
0
6
12
18
24
30
02468
R2 (kΩ)
e (µs)m
iT
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
d(on)
t
r
t
f
t
d(off)
0
30
60
90
120
150
020406080100
R2 (kΩ)
e (µs)mi
T
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
f
t
d(off)
t
r
t
d(on)
Document Number: 71297
S10-1054-Rev. D, 03-May-10
www.vishay.com
5
Vishay Siliconix
Si1865DL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
