NCV8114
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3
THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol Value Unit
Thermal Characteristics, TSOP−5
Thermal Resistance, Junction−to−Air
R
q
JA
259.9 °C/W
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm
2
Cu area.
RECOMMENDED OPERATING CONDITIONS
Rating Symbol Min Typ Max Unit
Input Voltage V
IN
1.7 5.5 V
Junction Temperature T
J
−40 +125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS −40°C ≤ T
J
≤ 125°C; V
IN
= V
OUT(NOM)
+ 1 V for V
OUT
options greater than 1.5 V. Otherwise V
IN
= 2.5 V, whichever is greater; I
OUT
= 1 mA, C
IN
= C
OUT
= 1 mF, unless otherwise noted. V
EN
= 0.9 V. Typical values are at T
J
= +25°C.
Min./Max. are for T
J
= −40°C and T
J
= +125°C respectively (Note 4).
Parameter
Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage V
IN
1.7 5.5 V
Output Voltage Accuracy −40°C ≤ T
J
≤ 125°C
V
OUT
≤ 2.0 V
V
OUT
−40 +50 mV
V
OUT
> 2.0 V −2 +3 %
Line Regulation VOUT + 0.5 V ≤ VIN ≤ 5.5 V (V
IN
≥ 1.7 V) Reg
LINE
0.01 0.1 %/V
Load Regulation IOUT = 1 mA to 300 mA Reg
LOAD
28 45 mV
Load Transient I
OUT
= 1 mA to 300 mA or 300 mA to 1 mA
in 1 ms, C
OUT
= 1 mF
Tran
LOAD
−50/
+30
mV
Dropout Voltage (Note 5) I
OUT
= 300 mA
V
OUT
= 1.5 V
V
DO
380 500
mV
V
OUT
= 1.85 V 260 370
V
OUT
= 2.8 V 170 270
V
OUT
= 3.0 V 160 260
V
OUT
= 3.1 V 155 250
V
OUT
= 3.3 V 150 240
Output Current Limit V
OUT
= 90% V
OUT(nom)
I
CL
300 600 mA
Ground Current IOUT = 0 mA I
Q
50 95
mA
Shutdown Current VEN ≤ 0.4 V, VIN = 5.5 V I
DIS
0.01 1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
V
EN
Voltage increasing
V
EN
Voltage decreasing
V
EN_HI
V
EN_LO
0.9
0.4
V
EN Pin Input Current VEN = 5.5 V I
EN
0.3 1.0
mA
Power Supply Rejection Ratio V
IN
= 4.3 V, V
OUT
= 3.3 V
I
OUT
= 10 mA
f = 1 kHz
PSRR
75 dB
Output Noise Voltage V
IN
= 2.5 V, V
OUT
= 1.8 V, I
OUT
= 150 mA
f = 10 Hz to 100 kHz
V
N
70
mV
rms
Thermal Shutdown Temperature Temperature increasing from TJ = +25°C T
SD
160 °C
Thermal Shutdown Hysteresis Temperature falling from T
SD
T
SDH
20 °C
Active Output Discharge Resistance VEN < 0.4 V, Version A only R
DIS
100
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when V
OUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
