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NCV8114ASN180T1G
P1-P3
P4-P6
P7-P9
P10-P12
NCV81
14
www
.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 20. Enable T
urn−on Response −
C
OUT
= 1
m
F,
I
OUT
= 1 mA
Figure 21. Enable T
urn−on Response −
C
OUT
= 1
m
F,
I
OUT
= 300 mA
50
m
s/div
50
m
s/div
Figure 22. Enable T
urn−on Response −
C
OUT
= 4.7
m
F,
I
OUT
= 1 mA
Figure 23. Enable T
urn−on Response −
C
OUT
= 4.7
m
F,
I
OUT
= 300 mA
50
m
s/div
50
m
s/div
Figure 24. Line T
ransient Response − Rising
Edge, I
OUT
= 1 mA
Figure 25. Line T
ransient Response − Falling
Edge, I
OUT
= 1 mA
20
m
s/div
20
m
s/div
500 mV/div
V
IN
= 4.3 V
V
OUT
= 3.3 V
V
EN
= 1 V
I
OUT
= 1 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
1 V/div
V
EN
500 mV/div
1 V/div
500 mV/div
10 mV/div
V
OUT
I
INRUSH
V
EN
V
OUT
I
INRUSH
V
OUT
V
IN
V
IN
= 4.3 V
V
OUT
= 3.3 V
V
EN
= 1 V
I
OUT
= 1 mA
C
IN
= 4.7
m
F
C
OUT
= 4.7
m
F
V
IN
= 4.3 V to 5.3 V
V
OUT
= 3.3 V
I
OUT
= 1 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
t
RISE
= 1
m
s
200 mA/div
200 mA/div
500 mV/div
V
IN
= 4.3 V
V
OUT
= 3.3 V
V
EN
= 1 V
I
OUT
= 300 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
V
EN
V
OUT
I
INRUSH
200 mA/div
1 V/div
500 mV/div
1 V/div
V
EN
V
OUT
I
INRUSH
200 mA/div
V
IN
= 4.3 V
V
OUT
= 3.3 V
V
EN
= 1 V
I
OUT
= 300 mA
C
IN
= 4.7
m
F
C
OUT
= 4.7
m
F
500 mV/div
10 mV/div
V
OUT
V
IN
V
IN
= 5.3 V to 4.3 V
V
OUT
= 3.3 V
I
OUT
= 1 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
t
FA
LL
= 1
m
s
NCV81
14
www
.onsemi.com
8
TYPICAL CHARACTERISTICS
Figure 26. Line T
ransient Response − Rising
Edge, I
OUT
= 300 mA
Figure 27. Line T
ransient Response − Falling
Edge, I
OUT
= 300 mA
Figure 28. Load T
ransient Response − Rising
Edge, V
OUT
= 3.3 V
, I
OUT
= 1 mA to 300 mA
Figure 29. Load T
ransient Response − Falling
Edge, V
OUT
= 3.3 V
, I
OUT
= 1 mA to 300 mA
Figure 30. Load T
ransient Response − Rising
Edge, V
OUT
= 3.3 V
, I
OUT
= 1 mA to 300 mA
Figure 31. Load T
ransient Response − Falling
Edge, V
OUT
= 3.3 V
, I
OUT
= 1 mA to 300 mA
4
m
s/div
4
m
s/div
500 mV/div
20 mV/div
V
OUT
V
IN
V
IN
= 4.3 V to 5.3 V
V
OUT
= 3.3 V
I
OUT
= 300 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
t
RISE
= 1
m
s
500 mV/div
20 mV/div
V
OUT
V
IN
V
IN
= 5.3 V to 4.3 V
V
OUT
= 3.3 V
I
OUT
= 300 mA
C
IN
= 1
m
F
C
OUT
= 1
m
F
t
FA
LL
= 1
m
s
5
m
s/div
20
m
s/div
100 mA/div
20 mV/div
V
OUT
I
OUT
V
IN
= 4.3 V
V
OUT
= 3.3 V
C
IN
= 1
m
F (MLCC)
C
OUT
= 1
m
F (MLCC)
t
RISE
= 1
m
s
100 mA/div
20 mV/div
V
OUT
I
OUT
t
FA
LL
= 1
m
s
V
IN
= 4.3 V
V
OUT
= 3.3 V
C
IN
= 1
m
F (MLCC)
C
OUT
= 1
m
F (MLCC)
5
m
s/div
100 mA/div
20 mV/div
V
OUT
I
OUT
V
IN
= 4.3 V
V
OUT
= 3.3 V
C
IN
= 4.7
m
F (MLCC)
C
OUT
= 4.7
m
F (MLCC)
t
RISE
= 1
m
s
20
m
s/div
100 mA/div
20 mV/div
V
OUT
I
OUT
V
IN
= 4.3 V
V
OUT
= 3.3 V
C
IN
= 4.7
m
F (MLCC)
C
OUT
= 4.7
m
F (MLCC)
t
FA
LL
= 1
m
s
NCV81
14
www
.onsemi.com
9
TYPICAL CHARACTERISTICS
Figure 32. T
urn−on/off − Slow Rising V
IN
Figure 33. Short Circuit and Thermal
Shutdown
Figure 34. Enable T
urn−off
Figure 35.
COPPER HEA
T SPREADER AREA (mm
2
)
600
500
400
700
300
200
100
0
200
250
300
350
400
450
500
q
JA
, JUNCTION−TO−AMBIENT
THERMAL RESIST
ANCE (
°
C/W)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
P
D(MAX)
, MAXIMUM POWER
DISSIP
A
TION (W)
P
D(MAX)
, T
A
= 25
°
C, 2 oz Cu
P
D(MAX)
, T
A
= 25
°
C, 1 oz Cu
q
JA
, 1 oz Cu
q
JA
, 2 oz Cu
10 ms/div
200 mA/div
1 V/div
V
OUT
I
OUT
V
IN
= 5.5 V
V
OUT
= 3.3 V
C
IN
= 1
m
F (MLCC)
C
OUT
= 1
m
F (MLCC)
Full Load
Overheating
Thermal
Shutdown
TSD Cycling
1 V/div
V
OUT
V
IN
10 ms/div
V
IN
= 4.3 V
V
OUT
= 3.3 V
I
OUT
= 10 mA
C
IN
= 1
m
F (MLCC)
C
OUT
= 1
m
F (MLCC)
500
m
s/div
V
OUT
V
EN
500 mV/div
1 V/div
V
IN
= 4.3 V
V
OUT
= 3.3 V
C
IN
= 1
m
F (MLCC)
C
OUT
= 1
m
F (MLCC)
t
FA
LL
= 1
m
s
C
OUT
= 4.7
m
F
C
OUT
= 1
m
F
P1-P3
P4-P6
P7-P9
P10-P12
NCV8114ASN180T1G
Mfr. #:
Buy NCV8114ASN180T1G
Manufacturer:
ON Semiconductor
Description:
IC REG LINEAR 1.8V 300MA 5TSOP
Lifecycle:
New from this manufacturer.
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