NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 20 August 2014 9 / 14
T
j
(°C)
25 12510050 75
003aac813
4
8
12
0
A
B
10
6
2
A = dV
D
/dt at condition T
j
°C
B = dV
D
/dt at condition T
j
[125] °C
Fig. 11. Normalized rate of rise of off-state voltage as a
function of junction temperature
T
j
(°C)
25 12510050 75
003aac814
4
8
12
0
A
B
A = dI
com
/dt at condition T
j
°C
B = dI
com
/dt at condition T
j
[125] °C
V
D
= 400 V
Fig. 12. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aac815
0
0.5
1.0
1.5
2.0
10
- 1
1 10 10
2
B (V/µs)
A [B]
A [spec]
A [B] = dI
com
/dt at condition B, dV
com
/dt
A [spec] is the data sheet value for dI
com
/dt
turn-off time is less than 20 ms
Fig. 13. Normalized critical rate of change of commutating current as a function of critical rate of change of
commutating voltage; minimum values
