Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
ACT102H-600D,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
ACT102H-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 August 2014
6 / 14
8.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
R
th(j-a)
thermal resistance
from junction to
ambient
full cycle;
Fig. 6
-
150
-
K/W
003aaf741
t
p
(s)
10
-
3
10
2
10
3
10
1
10
-
2
10
- 1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
t
p
P
t
Fig. 6.
T
ransient thermal impedance from junction to lead as a function of pulse width
NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
ACT102H-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 August 2014
7 / 14
9.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C;
Fig. 7
0.5
-
5
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C;
Fig. 7
0.5
-
5
mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C;
Fig. 8
-
-
25
mA
I
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C;
Fig. 8
-
-
25
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
-
20
mA
V
T
on-state voltage
I
T
= 0.3 A; T
j
= 25 °C;
Fig. 10
-
-
1.2
V
V
D
= 400 V; I
T
= 100 mA; T
j
= 125 °C
0.15
-
-
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C
-
-
0.9
V
V
D
= 600 V; T
j
= 25 °C
-
-
2
µA
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
-
0.2
mA
V
CL
clamping voltage
I
CL
= 0.1 mA; t
p
= 1 ms; T
j
≤ 125 °C
650
-
-
V
Dynamic charateristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 1
1
300
-
-
V/µs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
1 A;
dV
com
/dt = 15 V/µs; gate open circuit;
Fig. 12
;
Fig. 13
0.15
-
-
A/ms
NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
ACT102H-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 August 2014
8 / 14
I
GT
I
GT(25°C)
T
j
(°C)
-
50
0
150
100
50
1
2
3
0
003aac809
(1)
(2)
(1)
(2)
(1) LD+ G-
(2) LD- G-
Fig. 7.
Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-
50
150
100
0
50
003aac811
1
2
3
0
I
L
I
L(25°C)
Fig. 8.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-
50
150
100
0
50
003aac810
1
2
3
0
I
H
I
H(25°C)
Fig. 9.
Normalized holding current as a function of
junction temperature
003aaf722
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1
.0
1.5
2.0
V
T
(V)
I
T
(A)
(1)
(2)
(3)
V
o
= 0.758 V; R
s
= 0.263 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10.
On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
ACT102H-600D,118
Mfr. #:
Buy ACT102H-600D,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs 600V 0.2A +125C
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
ACT102H-600D,118
