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KAF-09000-ABA-DP-BA

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 3
1 Publication Order Number:
KAF−09000/D
KAF-09000
3056 (H) x 3056 (V) Full
Frame CCD Image Sensor
Description
Combining high resolution with outstanding sensitivity, the
KAF−09000 image sensor has been specifically designed to meet the
needs of next−generation low cost digital radiography and scientific
imaging systems. The high sensitivity available from 12−micron
square pixels combines with a low noise architecture to allow system
designers to improve overall image quality, or to relax system
tolerances to achieve lower cost. The excellent uniformity of the
KAF−09000 image sensor improves overall image integrity by
simplifying image corrections, while integrated anti−blooming
protection prevents image bleed from over−exposure in bright areas of
the image. To simplify device integration, the KAF−09000 image
sensor uses the same pin−out and package as the KAF−16801 image
sensor.
The sensor utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard front−side
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter Typical Value
Architecture Full Frame CCD [Square Pixels]
Total Number of Pixels 3103 (H) x 3086 (V) = 9.6 Mp
Number of Effective Pixels 3085 (H) x 3085 (V) = 9.5 Mp
Number of Active Pixels 3056 (H) x 3056 (V) = 9.3 Mp
Pixel Size
12 mm (H) x 12 mm (V)
Active Image Size 36.7 mm (H) x 36.7 mm (V)
51.9 mm diagonal,
645 1.3x optical format
Aspect Ratio Square
Horizontal Outputs 1
Saturation Signal 110 ke
−
Output Sensitivity
24 mV/e
−
Quantum Efficiency (550 nm) 64%
Responsivity (550 nm)
2595 ke/mJ/cm
2
62.3 V/mJ/cm
2
Read Noise (f = 3 MHz) 7 e
−
Dark Signal (T = 25°C) 5 e/pix/sec
Dark Current Doubling Temperature 7°C
Linear Dynamic Range (f = 4 MHz) 84 dB
Blooming Protection
(4 ms exposure time)
> 100 X saturation exposure
Maximum Data Rate 10 MHz
Package CERDIP, (sidebrazed pins, CuW)
Cover Glass AR coated 2 sides Taped Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−09000 CCD Image Sensor
Features
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• Large Pixel Size
• Large Image Area
• High Quantum Efficiency
• Low Noise Architecture
• Broad Dynamic Range
Applications
• Medical
• Scientific
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
KAF−09000
www.onsemi.com
2
ORDERING INFORMATION
Table 2. ORDERING INFORMATION
Part Number Description Marking Code
KAF−09000−ABA−DP−BA Monochrome, Microlens, CERDIP Package, (sidebrazed, CuW),
Taped clear coverglass, Standard grade
KAF−09000−ABA
[Serial Number]
KAF−09000−ABA−DP−AE Monochrome, Microlens, CERDIP Package, (sidebrazed, CuW),
Taped clear coverglass, Engineering sample
KAF−09000−ABA−DD−BA Monochrome, Microlens, CERDIP Package, (sidebrazed, CuW),
AR coated 2 sides, Standard grade
KAF−09000−ABA−DD−AE Monochrome, Microlens, CERDIP Package, (sidebrazed, CuW),
AR coated 2 sides, Engineering sample
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com.
KAF−09000
www.onsemi.com
3
DEVICE DESCRIPTION
Architecture
Figure 2. Block Diagram
KAF−09000
3056 H x 3056 V
12 μm x 12 μm Pixels
20 9
20 Dark
9
184 1 3
1 Test Row
V1
LOD
20413 2
VOUT
SUB
OG
RG
RD
VDD
VSS
1
6 3056
91
H1 H2
V2
Dark Reference Pixels
The periphery of the device is surrounded with a border of
light shielded pixels creating a dark region. Within this dark
region, there are 20 leading dark pixels on every line as well
as 20 full dark lines at the start and 9 full dark lines at the end
of every frame. Under normal circumstances, these pixels do
not respond to light and may be used as a dark reference.
Dummy Pixels
Within each horizontal shift register there are 14 leading
pixels and 3 trailing pixels. These are designated as dummy
pixels and should not be used to determine a dark reference
level.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron−hole pairs within the device. These
photon−induced electrons are collected locally by the
formation of potential wells at each pixel site. The number
of electrons collected is linearly dependent on light level and
exposure time and non−linearly dependent on wavelength.
When the pixel’s capacity is reached, excess electrons are
discharged into the lateral overflow drain to prevent
crosstalk or ‘blooming’. During the integration period, the
V1 and V2 register clocks are held at a constant (low) level.
Charge Transport
The integrated charge from each pixel is transported to the
output using a two−step process. Each line (row) of charge
is first transported from the vertical CCDs to a horizontal
CCD register using the V1 and V2 register clocks. The
horizontal CCD is presented a new line on the falling edge
of V2 while H1 is held high. The horizontal CCDs then
transport each line, pixel by pixel, to the output structure by
alternately clocking the H1 and H2 pins in a complementary
fashion.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

KAF-09000-ABA-DP-BA

Mfr. #:
Buy KAF-09000-ABA-DP-BA
Manufacturer:
ON Semiconductor
Description:
Image Sensors FULL FRAME CCD IMAGE SENSOR
Lifecycle:
New from this manufacturer.
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