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SQJ474EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
1
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
d
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
() at V
GS
= 10 V 0.030
R
DS(on)
() at V
GS
= 4.5 V 0.035
I
D
(A) 26
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
26
A
T
C
= 125 °C 15
Continuous Source Current (Diode Conduction)
a
I
S
30
Pulsed Drain Current
b
I
DM
65
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
22
Single Pulse Avalanche Energy E
AS
24 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
45
W
T
C
= 125 °C 15
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
70
°C/W
Junction-to-Case (Drain) R
thJC
3.3
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
2
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 100 V - - 1
μA V
GS
= 0 V V
DS
= 100 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 100 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 15 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 10 A - 0.022 0.030
V
GS
= 4.5 V I
D
= 5 A - 0.026 0.035
V
GS
= 10 V I
D
= 10 A, T
J
= 125 °C - - 0.052
V
GS
= 10 V I
D
= 10 A, T
J
= 175 °C - - 0.065
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 10 A - 28 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 771 1100
pF Output Capacitance C
oss
- 397 550
Reverse Transfer Capacitance C
rss
-2740
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 50 V, I
D
= 5 A
-14.530
nC Gate-Source Charge
c
Q
gs
-2.3-
Gate-Drain Charge
c
Q
gd
-2.8-
Gate Resistance R
g
f = 1 MHz 0.8 1.8 2.8
Turn-On Delay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 10
I
D
5 A, V
GEN
= 10 V, R
g
= 1
-510
ns
Rise Time
c
t
r
-2035
Turn-Off Delay Time
c
t
d(off)
-1830
Fall Time
c
t
f
-4065
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--65A
Forward Voltage V
SD
I
F
= 10 A, V
GS
= 0 - 0.86 1.2 V
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
3
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
16
32
48
64
80
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 6 V
V
GS
= 3V
V
GS
= 5V
V
GS
= 4V
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance ()
I
D
- Drain Current (A)
2nd line
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 3 6 9 12 15
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
I
D
= 5 A
V
DS
= 50 V
10
100
1000
10000
0
10
20
30
40
50
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
= -55 °C
T
C
= 125 °C
10
100
1000
10000
0
240
480
720
960
1200
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 10A
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P9P10-P11

SQJ474EP-T1_GE3

Mfr. #:
Buy SQJ474EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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