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SQJ474EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
4
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to Source Voltage
Transconductance
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 μA
10
100
1000
10000
0.00
0.04
0.08
0.12
0.16
0.20
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
10
100
1000
10000
0
10
20
30
40
50
0 3 6 9 12 15
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
= -55 °C
T
C
= 125 °C
10
100
1000
10000
100
104
108
112
116
120
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
5
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
C
= 25 °C
Single pulse
BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=70°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
SQJ474EP
www.vishay.com
Vishay Siliconix
S16-0423-Rev. A, 14-Mar-16
6
Document Number: 76275
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76275
.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P11

SQJ474EP-T1_GE3

Mfr. #:
Buy SQJ474EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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