September 1996
NDT452P
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
____________________________________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter NDT452P Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current - Continuous (Note 1a) ±3 A
- Pulsed ±20
P
D
Maximum Power Dissipation (Note 1a) 3 W
(Note 1b) 1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
NDT452P Rev. C3
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-3A, -30V. R
DS(ON)
= 0.18Ω @ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D S
G
D
S
G
© 1997 Fairchild Semiconductor Corporation
