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NDT452P

P1-P3P4-P6P7-P9P10-P10
NDT452P Rev. C3
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
-10-8-6-4-20
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -4.0V
GS
D
R , NORMALIZED
DS(on)
-4.5V
-8.0V
-10V
-6.0V
-7.0V
-5.0V
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -3A
D
R , NORMALIZED
DS(ON)
-10-8-6-4-20
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
D
V = -4.5 V
GS
-4.5V
-10V
125°C
25°C
R , NORMALIZED
DS(on)
-10V
-5-4-3-2-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = -10V
DS
GS
D
T = -55°C
J
-50 -25 0 25 50 75 100 125 150
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250µA
D
V = V
DS
GS
J
V , NORMALIZED
th
-5-4-3-2-10
-18
-15
-12
-9
-6
-3
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
-8.0
-7.0
-6.0
-5.0
-3.0
V = -10V
GS
DS
D
-4.0
NDT452P Rev. C3
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics (continued)
-50 -25 0 25 50 75 100 125 150
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
BV , NORMALIZED
DSS
I = -250µA
D
J
-2-1.6-1.2-0.8-0.4
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0VGS
SD
S
0 4 8 12 16
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -3A
V = -10V
D
DS
0.1 0.2 0.5 1 2 5 10 20
100
200
300
500
700
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on off
d(off)
f
r
d(on)
t t
t
tt
t
INVERTED
10%
PULSE WIDTH
NDT452P Rev. C3
-10-8-6-4-20
0
2
4
6
8
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = -15V
DS
125°C
0.1 0.2 0.5 1 2 5 10 30 50
0.01
0.03
0.1
0.3
1
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
100ms
10s
DC
RDS(ON) LIMIT
1s
10ms
1ms
V = -10V
SINGLE PULSE
R = 42 C/W
T = 25°C
GS
A
θ
JA
o
100us
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1 c
θ
JA
θ
JA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
P1-P3P4-P6P7-P9P10-P10

NDT452P

Mfr. #:
Buy NDT452P
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET DISC BY MFG 2/02
Lifecycle:
New from this manufacturer.
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