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BGU8053X

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
4 / 16
8 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage - 6 V
V
ctrl(sd)
shutdown control voltage - 3 V
I
CC
supply current - 85 mA
P
i(RF)CW
continuous waveform RF input power - 20 dBm
T
stg
storage temperature -40 +150 °C
T
j
junction temperature - 150 °C
P power dissipation T
case
≤ 125 °C
[1]
- 510 mW
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001-2010
- 1.5 kVV
ESD
electrostatic discharge voltage
Charged Device Model (CDM); According
to JEDEC standard 22-C101B
- 2 kV
[1] Case is ground solder pad.
9 Recommended operating conditions
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.3 5 5.25 V
Z
0
characteristic impedance - 50 - Ω
T
case
case temperature -40 - +85 °C
10 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-case)
thermal resistance from junction to case
[1]
[2]
50 K/W
[1] Case is ground solder pad.
[2] Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air.
NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
5 / 16
11 Characteristics
Table 7. Characteristics
f = 2500 MHz; V
CC
= 5 V; T
amb
= 25 °C; input and output 50 Ω; R
bias
= 5.1 kΩ; unless otherwise specified. All RF parameters
are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 2500 MHz
Symbol Parameter Conditions Min Typ Max Unit
on state 36 48 60 mAI
CC
supply current
off state - 2.8 - mA
on state 17 18.5 20 dBG
ass
associated gain
off state - -23.5 - dB
NF noise figure
[1]
- 0.56 0.75 dB
P
L(1dB)
output power at
1 dB gain compression
- 18 - dBm
2-tone; tone spacing = 1 MHz;P
i
= -15 dBm
per tone
32 36 - dBmIP3
O
output third-order intercept point
2-tone; tone spacing = 1 MHz;P
i
= -15 dBm
per tone
[2]
30 34 - dBm
on state - 12.2 - dBRL
in
input return loss
off state - 6.3 - dB
RL
out
output return loss - 28.0 - dB
ISL isolation - 22.0 - dB
t
s(pon)
power-on settling time P
i
= -20 dBm; SHDN (pin 6) from HIGH to
LOW
[2]
- 1.4 - μs
t
s(poff)
power-off settling time P
i
= -20 dBm; SHDN (pin 6) from LOW to
HIGH
[2]
- 0.4 - μs
K Rollett stability factor both on state and off state up to f = 20 GHz 1 - -
R
pd(SHDN)
pull-down resistance on pin SHDN - 30 - kΩ
[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
[2] For TDD systems where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
Table 8. Shutdown control
V
CC
= 5 V; T
amb
= 25 °C; input and output 50 Ω; R
bias
= 5.1 kΩ; unless otherwise specified. All RF parameters are measured
in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 2500 MHz
State V
ctrl(sd)
[1]
Unit
on state ≤ 0.6 V
off state ≥ 1.2 V
[1] Voltage on pin 6 (SHDN).
NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
6 / 16
11.1 Graphics
aaa-010275
2 2.4 2.8 3.2 3.6 4
10
14
18
22
26
f (GHz)
G
p
G
p
(dB)(dB)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 3. Power gain as a function of frequency; typical
values
aaa-010276
2 2.4 2.8 3.2 3.6 4
0
5
10
15
20
25
f (GHz)
G
p
G
p
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; T
amb
= 25°C.
(1) I
CC
= 30 mA
(2) I
CC
= 45 mA
(3) I
CC
= 60 mA
Figure 4. Power gain as a function of frequency; typical
values
aaa-010285
2 2.4 2.8 3.2 3.6 4
0
0.4
0.8
1.2
1.6
f (GHz)
NFNF
(dB)(dB)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V;I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 5. Noise figure as a function of frequency; typical
values
aaa-010286
2 2.4 2.8 3.2 3.6 4
0
0.2
0.4
0.6
0.8
1
1.2
f (GHz)
NFNF
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; T
amb
= 25°C.
(1) I
CC
= 30 mA
(2) I
CC
= 45 mA
(3) I
CC
= 60 mA
Figure 6. Noise figure as a function of frequency; typical
values
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BGU8053X

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RF Amplifier Low noise high linearity amplifier
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