NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
7 / 16
aaa-010277
2 2.4 2.8 3.2 3.6 4
-20
-15
-10
-5
0
f (GHz)
RL
in
RL
in
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 7. Input return loss as a function of frequency;
typical values
aaa-010278
2 2.4 2.8 3.2 3.6 4
-40
-30
-20
-10
0
f (GHz)
RL
out
RL
out
(dB)(dB)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 8. Output return loss as a function of frequency;
typical values
aaa-009929
0 0.5 1 1.5 2 2.5 3 3.5 4
-40
-20
0
20
40
f (GHz)
s-parss-pars
(dB)(dB)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
V
CC
= 5 V; T
amb
= 25°C; I
CC
= 48 mA.
Figure 9. Wideband S-parameters as function of
frequency; typical values
aaa-009930
0 4 8 12 16 20
0
1
2
3
4
5
f (GHz)
KK
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; I
CC
= 48 mA.
(1) T
amb
=- 40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 10. Rollett stability factor as a function of
frequency; typical values
NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
8 / 16
aaa-009931
1.9 2.2 2.5 2.8 3.1 3.4 3.7 4
30
32
34
36
38
40
f (GHz)
IP3
O
IP3
O
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; P
i
= -15 dBm per tone; I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 11. Output third-order intercept point as a
function of frequency; typical values
aaa-009932
30 35 40 45 50 55 60
30
32
34
36
38
40
I
CC
(mA)
IP3
O
IP3
O
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; P
i
= -15 dBm per tone; T
amb
= 25°C.
(1) f = 2000 MHz
(2) f = 2500 MHz
(3) f = 3000 MHz
Figure 12. Output third-order intercept point as a
function of supply current; typical values
aaa-009933
1.9 2.2 2.5 2.8 3.1 3.4 3.7 4
15
16
17
18
19
20
f (GHz)
P
L(1dB)
P
L(1dB)
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
V
CC
= 5 V; I
CC
= 48 mA.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 13. Output power at 1 dB gain compression as a
function of frequency; typical values
aaa-009934
30 35 40 45 50 55 60
10
12
14
16
18
20
I
CC
(mA)
P
L(1dB)
P
L(1dB)
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; T
amb
= 25°C.
(1) f = 2000 MHz
(2) f = 2500 MHz
(3) f = 3000 MHz
Figure 14. Output power at 1 dB gain compression as a
function of supply current; typical values
NXP Semiconductors
BGU8053
Low noise high linearity amplifier
BGU8053 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 17 July 2017
9 / 16
T
amb
= 25°C
(1) V
CC
= 3.0 V
(2) V
CC
= 3.3 V
(3) V
CC
= 4.0 V
(4) V
CC
= 4.5 V
(5) V
CC
= 5 V
Figure 15. I
CC
as a function of R
bias
, typical values

BGU8053X

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Low noise high linearity amplifier
Lifecycle:
New from this manufacturer.
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