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PHPT61003PYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
PHPT61003PY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 13 January 2014 9 / 15
11. Test information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 12. BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
PHPT61003PY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 13 January 2014 10 / 15
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT669
MO-235
sot669_po
11-03-25
13-02-27
Unit
(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
A
1
A
2
1.10
0.95
A
3
b b
2
b
3
0.1
L
2
w y
8
°
0
°
θ
b
4
c c
2
D
(1)
D
1
(1)
E
(1)
E
1
(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L
1
A C
1/2 e
w A
0 5 mm
scale
e
E
1
b
c
2
A
2
1
2 3 4
mounting
base
D
1
c
E
b
2
b
3
b
4
H
D
L
2
L
1
C
X
y C
q
(A
3
)
L
A
A
1
detail X
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
NXP Semiconductors
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
PHPT61003PY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 13 January 2014 11 / 15
13. Soldering
0.6
(3×)
0.7
(4×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
4.2
4.7
0.25
(2×)
1.27
1.1
2
3.81
0.9
(3×)
SP opening =
Cu - 0.050
SR opening =
Cu + 0.075
2.15
2.55
3.45
3.5
3.3
solder lands
solder resist
occupied area
solder paste
125 µm stencil
Dimensions in mm
SOT669
Footprint information for reflow soldering
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PHPT61003PYX

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN High Power BipolarTransistor
Lifecycle:
New from this manufacturer.
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