NCP1294
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (−40°C < T
A
< 85°C; −40°C < T
J
< 125°C; 3.0 V < V
C
< 15 V; 4.7 V < V
CC
< 15 V;
R
T
= 12 k; C
T
= 390 pF; unless otherwise specified.)
Characteristic UnitMaxTypMinTest Conditions
Gate Driver
High Saturation Voltage
V
C
− GATE, V
C
= 10 V, I
SOURCE
= 200 mA − 1.5 2.0 V
Low Saturation Voltage GATE − PGND, I
SINK
= 200 mA − 1.2 1.5 V
High Voltage Clamp − 11 13.5 16 V
Output Current 1.0 nF Load. Note 3 − 1.0 1.25 A
Output UVL Leakage GATE = 0 V − 1.0 50
mA
Rise Time 1.0 nF Load, V
C
= 20 V, 1.0 V < GATE < 9.0 V − 60 100 ns
Fall Time 1.0 nF Load, V
C
= 20 V, 9.0 V < GATE < 1.0 V − 25 50 ns
Max Gate Voltage During UVL/Sleep
I
GATE
= 500 mA
0.4 0.7 1.0 V
Feed Forward (FF)
Discharge Voltage
I
FF
= 2.0 mA − 0.3 0.7 V
Discharge Current FF = 1.0 V 2.0 16 30 mA
FF to GATE Delay − 50 75 125 ns
Overcurrent Protection
Overcurrent Threshold
I
SET
= 0.5 V, Ramp I
SENSE
0.475 0.5 0.525 V
I
SENSE
to GATE Delay − 50 90 125 ns
External Voltage Monitors
Overvoltage Threshold
OV Increasing 1.9 2.0 2.1 V
Overvoltage Hysteresis Current OV = 2.15 V 10 12.5 15
mA
Undervoltage Threshold UV Increasing 0.95 1.0 1.05 V
Undervoltage Hysteresis − 25 75 125 mV
Soft−Start (SS)
Charge Current
SS = 2.0 V 40 50 70
mA
Discharge Current SS = 2.0 V 4.0 5.0 7.0
mA
Charge Voltage − 2.8 3.0 3.4 V
Discharge Voltage − 0.25 0.3 0.35 V
Soft−Start Clamp Offset FF = 1.25 V 1.15 1.25 1.35 V
Soft−Start Fault Voltage OV = 2.15 V or LV = 0.85 V − 0.1 0.2 V
Blanking
Blanking Time
− 50 150 250 ns
SS Blanking Disable Threshold V
FB
< 1.0 2.8 3.0 3.3 V
COMP Blanking Disable Threshold V
FB
< 1.0, SS > 3.0 V 2.8 3.0 3.3 V
Thermal Shutdown
Thermal Shutdown
Note 3 125 150 180 °C
Thermal Hysteresis Note 3 5.0 10 15 °C
3. Guaranteed by design, not 100% tested in production.
