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74HC21PW,118

P1-P3P4-P6P7-P9P10-P12P13-P15
74HC21 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 7 — 30 November 2015 3 of 14
NXP Semiconductors
74HC21
Dual 4-input AND gate
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 package: P
tot
derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60 C.
Table 2. Pin description
Symbol Pin Description
1A, 1B, 1C, 1D 1, 2, 4, 5 data input
n.c. 3, 11 not connected
1Y 6 data output
GND 7 ground (0 V)
2Y 8 data output
2A, 2B, 2C, 2D 9, 10, 12, 13 data input
V
CC
14 supply voltage
Table 3. Function table
[1]
Input Output
nA nB nC nD nY
LXXXL
XLXXL
XXLXL
XXXLL
HHHHH
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+0.5 V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
CC
+0.5V
[1]
- 20 mA
I
O
output current 0.5 V < V
O
< V
CC
+0.5V - 25 mA
I
CC
supply current - 50 mA
I
GND
ground current 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation SO14 and (T)SSOP14 packages
[2]
-500mW
74HC21 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 7 — 30 November 2015 4 of 14
NXP Semiconductors
74HC21
Dual 4-input AND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.0 5.0 6.0 V
V
I
input voltage 0 - V
CC
V
V
O
output voltage 0 - V
CC
V
t/V input transition rise and fall
rate
V
CC
= 2.0 V - - 625 ns/V
V
CC
= 4.5 V - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 ns/V
T
amb
ambient temperature 40 - +125 C
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--2.0- 20 - 40A
C
I
input
capacitance
-3.5- - - - -pF
74HC21 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 7 — 30 November 2015 5 of 14
NXP Semiconductors
74HC21
Dual 4-input AND gate
10. Dynamic characteristics
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
t
is the same as t
THL
and t
TLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W):
P
D
=C
PD
V
CC
2
f
i
N+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
Table 7. Dynamic characteristics
GND = 0 V; test circuit see Figure 8.
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
t
pd
propagation
delay
nA, nB, nC or nD to nY;
see Figure 7
[1]
V
CC
= 2.0 V - 33 110 - 140 - 165 ns
V
CC
= 4.5 V - 12 22 - 28 - 33 ns
V
CC
= 6.0 V - 10 19 - 24 - 28 ns
V
CC
=5.0V; C
L
=15pF-10-----ns
t
t
transition time nY output; see Figure 7
[2]
V
CC
= 2.0 V - 19 75 - 95 - 110 ns
V
CC
= 4.5 V - 7 15 - 19 - 22 ns
V
CC
= 6.0 V - 6 13 - 16 - 19 ns
C
PD
power
dissipation
capacitance
V
I
= GND to V
CC
[3]
-15-----pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74HC21PW,118

Mfr. #:
Buy 74HC21PW,118
Manufacturer:
Nexperia
Description:
Logic Gates AND 2CIRCUIT 6V
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