SI7148DP-T1-E3 Datasheet SI7148DP-T1-E3, SI7148DP-T1-GE3 | P1-P3

Vishay Siliconix

Si7148DP

Document Number: 73314

S09-0273-Rev. B, 16-Feb-09

www.vishay.com

1

N-Channel 75-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

APPLICATIONS

• Primary Side Switch

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

75

0.011 at V

GS

= 10 V

28

33 nC

0.0145 at V

GS

= 4.5 V

28

Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free)

Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on T

C

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

75

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

28

A

T

C

= 70 °C

22

T

A

= 25 °C

28

b, c

T

A

= 70 °C

12

b, c

Pulsed Drain Current

I

DM

60

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

28

T

A

= 25 °C

4.3

b, c

Avalanche Current

L = 0.1 mH

I

AS

45

Single-Pulse Avalanche Energy

E

AS

100 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

96

W

T

C

= 70 °C

61

T

A

= 25 °C

5.4

b, c

T

A

= 70 °C

3.4

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

www.vishay.com

2

Document Number: 73314

S09-0273-Rev. B, 16-Feb-09

Vishay Siliconix

Si7148DP

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 65 °C/W.

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

t ≤ 10 s

R

thJA

18 23

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

1.0 1.3

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

75 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

75

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 6

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.5 2.0 2.5

V

DS

= V

GS

, I

D

= 5 mA

2.3

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 75 V, V

GS

= 0 V

1

µA

V

DS

= 75 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A

0.0091 0.011

Ω

V

GS

= 4.5 V, I

D

= 13.5 A

0.012 0.0145

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 15 A

60 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 35 V, V

GS

= 0 V, f = 1 MHz

2900

pFOutput Capacitance

C

oss

370

Reverse Transfer Capacitance

C

rss

196

Total Gate Charge

Q

g

V

DS

= 38 V, V

GS

= 10 V, I

D

= 15 A

68 100

nC

V

DS

= 38 V, V

GS

= 4.5 V, I

D

= 15 A

33 50

Gate-Source Charge

Q

gs

9.5

Gate-Drain Charge

Q

gd

16.8

Gate Resistance

R

g

f = 1 MHz 0.5 1.1 1.7 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 38 V, R

L

= 3.8 Ω

I

D

≅ 10 A, V

GEN

= 4.5 V, R

g

= 1 Ω

33 50

ns

Rise Time

t

r

255 390

Turn-Off Delay Time

t

d(off)

35 55

Fall Time

t

f

100 150

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 38 V, R

L

= 3.8 Ω

I

D

≅ 10 A, V

GEN

= 10 V, R

g

= 1 Ω

17 26

Rise Time

t

r

46 70

Turn-Off Delay Time

t

d(off)

39 60

Fall Time

t

f

18 30

Document Number: 73314

S09-0273-Rev. B, 16-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7148DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

Current

I

S

T

C

= 25 °C

25

A

Pulse Diode Forward Current

a

I

SM

60

Body Diode Voltage

V

SD

I

S

= 4.3 A

0.76 1.1 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 12 A, dI/dt = 100 A/µs, T

J

= 25 °C

41 65 ns

Body Diode Reverse Recovery Charge

Q

rr

67 105 nC

Reverse Recovery Fall Time

t

a

27

ns

Reverse Recovery Rise Time

t

b

14

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

SI7148DP-T1-E3

SI7148DP-T1-E3

Products related to this Datasheet