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SI7148DP-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 73314
S09-0273-Rev. B, 16-Feb-09
Vishay Siliconix
Si7148DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
60
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
= 10 V thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0 102030405060
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
0 10203040506 007
I
D
= 15 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 53 V
V
DS
= 38 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
600
1200
1800
2400
3000
3600
4200
0 1530456075
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 4.5 V
I
D
= 15 A
Document Number: 73314
S09-0273-Rev. B, 16-Feb-09
www.vishay.com
5
Vishay Siliconix
Si7148DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.01
10
60
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.1
1.0
1.3
1.6
1.9
2.2
2.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 15 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
J
= 25 °C
T
J
= 125 °C
0
120
200
40
80
Power (W)
Time (s)
160
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.01 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
0.1
1 ms
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
Limited by
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
R
DS(on)
*
www.vishay.com
6
Document Number: 73314
S09-0273-Rev. B, 16-Feb-09
Vishay Siliconix
Si7148DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Power, Junction-to-Case
0
15
30
45
60
75
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
0
20
40
60
80
100
120
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Single Pulse Avalanche Capability
Power, Junction-to-Ambient
100
1
0.00001 0.001 0.1 1
0.1
10
0.0001
T
A
- Time In Avalanche (s)
I
C
- Peak Avalanche Current (A)
T
A
=
L x I
D
BV - V
DD
0.01
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12P13-P14

SI7148DP-T1-E3

Mfr. #:
Buy SI7148DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 75V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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