MPS6601RLRAG Datasheet MPS6652G, MPS6652RLRAG, MPS6651G | P1-P3

April, 2007 − Rev. 5

1 Publication Order Number:

MPS6601/D

NPN − MPS6601; PNP −

MPS6651, MPS6652

MPS6652 is a Preferred Device

Amplifier Transistors

Features

• Voltage and Current are Negative for PNP Transistors

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPS6601/6651

MPS6652

V

CEO

25

40

Vdc

Collector−Base Voltage

MPS6601/6651

MPS6652

V

CBO

25

30

Vdc

Emitter−Base Voltage V

EBO

4.0 Vdc

Collector Current − Continuous I

C

1000 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

(Note 1)

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. R

q

JA

is measured with the device soldered into a typical printed circuit board.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

MPS66xy = Device Code

x = 0 or 5

y = 1 or 2

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

Preferred devices are recommended choices for future use

and best overall value.

MPS

66xy

AYWW G

G

COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PN

P

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

NPN − MPS6601; PNP − MPS6651, MPS6652

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 1.0 mAdc, I

B

= 0) MPS6601/6651

MPS6652

V

(BR)CEO

25

40

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0) MPS6601/6651

MPS6652

V

(BR)CBO

25

40

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

4.0 − Vdc

Collector Cutoff Current

(V

CE

= 25 Vdc, I

B

= 0) MPS6601/6651

(V

CE

= 30 Vdc, I

B

= 0) MPS6652

I

CES

−

0.1

mAdc

Collector Cutoff Current

(V

CB

= 25 Vdc, I

E

= 0) MPS6601/6651

(V

CB

= 30 Vdc, I

E

= 0) MPS6652

I

CBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 500 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 1000 mAdc, V

CE

= 1.0 Vdc)

h

FE

50

30

−

Collector−Emitter Saturation Voltage

(I

C

= 1000 mAdc, I

B

= 100 mAdc)

V

CE(sat)

− 0.6

Vdc

Base−Emitter On Voltage

(I

C

= 500 mAdc, V

CE

= 1.0 Vdc)

V

BE(on)

− 1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 100 MHz)

f

T

100 −

MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

− 30

pF

SWITCHING CHARACTERISTICS

Delay Time

(V

CC

= 40 Vdc, I

C

= 500 mAdc,

I

B1

= 50 mAdc,

t

p

w 300 ns Duty Cycle)

t

d

− 25 ns

Rise Time t

r

− 30 ns

Storage Time t

s

− 250 ns

Fall Time t

f

− 50 ns

ORDERING INFORMATION

Device Package Shipping

†

MPS6601RLRAG TO−92 (TO−226)

(Pb−Free)

2000 Units / Tape & Reel

MPS6651G TO−92 (TO−226)

(Pb−Free)

5000 Units / Bulk

MPS6652 TO−92 (TO−226)

MPS6652G TO−92 (TO−226)

(Pb−Free)

MPS6652RLRAG TO−92 (TO−226)

(Pb−Free)

2000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NPN − MPS6601; PNP − MPS6651, MPS6652

http://onsemi.com

3

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

0.03

0.02

0.1

0.07

0.05

0.01

0.3

0.2

1.0

0.7

0.5

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

R

q

JC

(t) = (t)

q

JC

R

q

JC

= 100°C/W MAX

R

q

JA

(t)d = r(t)

q

JA

R

q

JA

= 357°C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

1

T

J(pk)

− T

C

= P

(pk)

q

JC

(t)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

P

(pk)

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

Figure 2. Switching Time Test Circuits

OUTPUT

TURN−ON TIME

−1.0 V

V

CC

+40

V

R

L

* C

S

t 6.0 pF

R

B

100

V

in

5.0 mF

t

r

= 3.0 ns

0

+10

V

5.0 ms

OUTPUT

TURN−OFF TIME

+V

BB

V

CC

+40

V

R

L

* C

S

t 6.0 pF

R

B

100

V

in

5.0 mF

t

r

= 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

MPS6601RLRAG

MPS6601RLRAG

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