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MPS6601RLRAG

P1-P3P4-P6P7-P7
NPN − MPS6601; PNP − MPS6651, MPS6652
http://onsemi.com
4
Figure 3. MPS6601/6602 DC Current Gain Figure 4. MPS6651/6652 DC Current Gain
Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product
Figure 7. On Voltages Figure 8. On Voltages
100 100010
I
C
, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
I
C
, COLLECTOR CURRENT (mA)
−100 −1000−10
200
100
70
50
20
100 100010
I
C
, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
I
C
, COLLECTOR CURRENT (mA)
−100 −1000−10
300
200
100
70
50
30
−200200
10 10001.0
I
C
, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
I
C
, COLLECTOR CURRENT (mA)
−10 −1000−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
0
−100100
T
J
= 25°C
T
J
= 25°C
V
CE
= 1.0 V
T
J
= 25°C
V
CE
= −1.0 V
T
J
= 25°C
V
CE
= 10 V
T
J
= 25°C
f = 30 MHz
V
CE
= −10 V
T
J
= 25°C
f = 30 MHz
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
NPN PNP
V
BE(SAT)
@ I
C
/I
B
= 10
V
CE(SAT)
@ I
C
/I
B
= 10
V
BE(ON)
@ V
CE
= 1.0 V
V
BE(SAT)
@ I
C
/I
B
= 10
V
CE(SAT)
@ I
C
/I
B
= 10
V
BE(ON)
@ V
CE
= −1.0 V
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
FE
h , CURRENT GAIN
h , CURRENT GAIN
FE
NPN − MPS6601; PNP − MPS6651, MPS6652
http://onsemi.com
5
Figure 9. Capacitance Figure 10. Capacitance
Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure
Figure 13. MPS6601/6602 Switching Times Figure 14. MPS6651/6652 Switching Times
10 25C
ob
V
R
, REVERSE VOLTAGE (VOLTS)
80
60
40
20
0
V
R
, REVERSE VOLTAGE (VOLTS)
160
120
80
40
0
100 10 k10
R
s
, SOURCE RESISTANCE (OHMS)
10
8.0
6.0
4.0
2.0
0
R
s
, SOURCE RESISTANCE (OHMS)
1 k10
10
8.0
6.0
4.0
2.0
0
10 k1 k
20 100010
I
C
, COLLECTOR CURRENT (mA)
200
100
50
20
10
I
C
, COLLECTOR CURRENT (mA)
−20 −1000−10
500
200
100
50
20
10
−100100
T
J
= 25°C
V
CE
= −5.0 V
f = 1.0 kHz
T
A
= 25°C
C, CAPACITANCE (pF)NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
t, TIME (NS)
t, TIME (NS)
NPN PNP
5.0
15 20
2.0 5.0C
ib
1.0
3.0 4.0
−10 −25C
ob
−5.0
−15 −20
C
ib
−2.0 −5.0
−1.0
−3.0 −4.0
T
J
= 25°C
C, CAPACITANCE (pF)
I
C
= 100 mA
100
V
CE
= 5.0 V
f = 1.0 kHz
T
A
= 25°C
I
C
= 100 mA
50
200 500
1 k
500
3 k
10 k
5 k
t
d
@ V
BE(off)
= 0.5 V
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
t
d
t
d
@ V
BE(off)
= −0.5 V
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
t
d
−50 −200 −500
1 k
3 k
5 k
10 k
C
ib
C
ob
C
ib
C
ob
NPN − MPS6601; PNP − MPS6651, MPS6652
http://onsemi.com
6
Figure 15. Base−Emitter Temperature
Coefficient
Figure 16. Base−Emitter Temperature
Coefficient
Figure 17. Safe Operating Area Figure 18. Safe Operating Area
Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region
100 10001.0
I
C
, COLLECTOR CURRENT (mA)
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
I
C
, COLLECTOR CURRENT (mA)
−100 −1000−1.0
−1.2
−1.6
−2.0
−2.4
−2.8
101.0
V
CE
, COLLECTOR−EMITTER VOLTAGE
500
200
100
50
20
10
V
CE
, COLLECTOR−EMITTER VOLTAGE
−10 −40−1.0
−500
−200
−100
−50
−20
−10
−2020
0.1 100.01
I
B
, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
I
B
, BASE CURRENT (mA)
−0.1 −100−0.01
−1.0
−0.8
−0.6
−0.4
−0.2
0
−1.01.0
T
J
= 25°C
R
VB
, TEMPERATURE COEFFICIENT (mV/ C)I
C
, COLLECTOR CURRENT (mA)
NPN PNP
10
R
q
VB
for V
BE
q
°
R
VB
, TEMPERATURE COEFFICIENT (mV/ C)
q
°
−10
−0.8
R
q
VB
for V
BE
−2.0 −5.0
−1 k
2.0 5.0 40
1 k
I
C
, COLLECTOR CURRENT (mA)
−10
100
I
C
=
100 mA
I
C
=
50 mA
I
C
=
250 mA
I
C
=
500 mA
I
C
=
1000 mA
I
C
=
10 mA
T
J
= 25°C
I
C
=
−100 mA
I
C
=
−50 mA
I
C
=
−250 mA
I
C
=
−500 mA
I
C
=
−1000 mA
I
C
=
−10 mA
1.0 MS
1.0 s
T
C
= 25°C
MPS6601
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS6602
1.0 MS
1.0 s
T
C
= 25°C
MPS6651
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS6652
, COLLECTOR VOLTAGE (VOLTS)V
CE
, COLLECTOR VOLTAGE (VOLTS)V
CE
P1-P3P4-P6P7-P7

MPS6601RLRAG

Mfr. #:
Buy MPS6601RLRAG
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 25V 1A TO-92
Lifecycle:
New from this manufacturer.
Delivery:
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