LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 46 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
V
DD(3V3)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C
Fig 9. RTC battery maximum supply current I
BAT
versus temperature in Deep
power-down mode
V
DD(3V3)
= V
i(VBAT)
= 3.3 V; T
amb
=25C.
Fig 10. Total DC-to-DC converter maximum supply current I
DD(DCDC)dpd(3V3)
versus
temperature in Deep power-down mode
002aae047
10
30
20
40
I
BAT
(μA)
0
temperature (°C)
40 853510 6015
V
i(VBAT)
= 3.3 V
V
i(VBAT)
= 3.0 V
002aae048
temperature (°C)
40 853510 6015
I
DD(DCDC)dpd(3v3)
(μA)
40
80
20
60
100
0
V
DD(DCDC)(3V3)
= 3.3 V
V
DD(DCDC)(3V3)
= 3.0 V
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 47 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
10.3 Electrical pin characteristics
Conditions: V
DD(3V3)
= 3.3 V; standard port pins.
Fig 11. Typical HIGH-level output voltage V
OH
versus HIGH-level output source current
I
OH
Conditions: V
DD(3V3)
= 3.3 V; standard port pins.
Fig 12. Typical LOW-level output current I
OL
versus LOW-level output voltage V
OL
I
OH
(mA)
0 24168
002aaf112
2.8
2.4
3.2
3.6
V
OH
(V)
2.0
T = 85 °C
25 °C
40 °C
V
OL
(V)
0 0.60.40.2
002aaf111
5
10
15
I
OL
(mA)
0
T = 85 °C
25 °C
40 °C
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 48 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11. Dynamic characteristics
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
[3] LPC2364HBD only.
[4] Bus capacitance C
b
in pF, from 10 pF to 400 pF.
Table 9. Dynamic characteristics
T
amb
=
40
C to +85
C for standard devices,
40
C to +125
C for LPC2364HBD only, unless otherwise specified; V
DD(3V3)
over specified ranges.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
ARM processor clock frequency
f
oper
operating frequency CCLK; 40 C to +85 C1 - 72 MHz
CCLK; > 85 C
[3]
1-60MHz
IRC; 40 C to +85 C 3.96 4 4.04 MHz
IRC; > 85 C
[3]
3.98 4.02 4.06 MHz
External clock
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
0.4 - - ns
t
CLCX
clock LOW time T
cy(clk)
0.4 - - ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns
I
2
C-bus pins (P0[27] and P0[28])
t
f(o)
output fall time V
IH
to V
IL
20 + 0.1 C
b
[4]
--ns
SSP interface
t
su(SPI_MISO)
SPI_MISO set-up time T
amb
= 25 C; measured
in SPI Master mode; see
Figure 15
-11-ns
Fig 13. External clock timing (with an amplitude of at least V
i(RMS)
= 200 mV)
t
CHCL
t
CLCX
t
CHCX
T
cy(clk)
t
CLCH
002aaa907

LPC2366FBD100,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU ARM7 256KF/USB/ENET
Lifecycle:
New from this manufacturer.
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