IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
10
AC Test Conditions (VDDQ - 3.3V/2.5V)
Figure 1. AC Output Test load.
Figure 2. Output Test Load
(For t
CKLZ, tCKHZ, tOLZ, and tOHZ).
*Including scope and jig.
Figure 3. Typical Output Derating (Lumped Capacitive Load).
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V / GND to 2.5V
2ns Max.
1.5V/1.25V
1.5V/1.25V
Figures 1 and 2
4869 tbl 11
1.5V/1.25
50
50
4869 drw 03
10pF
(Tester)
D
ATA
OUT
,
4869 drw 04
590
5pF*
435
3.3V
DATA
OUT
,
833
5pF*
770
.
V
DATA
OUT
,
-1
1
2
3
4
5
6
7
20.5
30
50 80 100 200
10.5pF is the I/O capacitance of this
device, and 10pF is the AC Test Load
Capacitance.
Capacitance (pF)
tAA
(
Typical, ns)
4869 drw 05
,
11
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(5)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE= V
IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for t
DH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual t
DH will always be smaller than the actual tOW.
5. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(5)
Symbol Parameter
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
UnitMin. Max. Min. Max. Min. Max.
READ CYCLE
t
RC
Read Cycle Time 10
____
12
____
15
____
ns
t
AA
Address Access Time
____
10
____
12
____
15 ns
t
ACE
Chip Enable Access Time
(3)
____
10
____
12
____
15 ns
t
ABE
Byte Enable Access Time
(3)
____
5
____
6
____
7ns
t
AOE
Output Enable Access Time
____
5
____
6
____
7ns
t
OH
Output Hold from Address Change 3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
0
____
0
____
0
____
ns
t
HZ
Output High-Z Time
(1,2)
040608ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
10
____
10
____
15 ns
t
SOP
Semaphore Flag Update Pulse (OE or SEM)
____
4
____
6
____
8ns
t
SAA
Semaphore Address Access Time 3 10 3 12 3 20 ns
4869 tbl 12
Symbol Parameter
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
UnitMi n. Ma x. M in. M ax. Mi n. Ma x.
WRITE CYCLE
t
WC
Write Cycle Time 10
____
12
____
15
____
ns
t
EW
Chip Enable to End-of-Write
(3)
8
____
10
____
12
____
ns
t
AW
Address Valid to End-of-Write 8
____
10
____
12
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t
WP
Write Pulse Width 8
____
10
____
12
____
ns
t
WR
Write Recovery Time 0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write 6
____
8
____
10
____
ns
t
DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
4
____
4
____
4ns
t
OW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
ns
t
SWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
t
SPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
4869 tbl 13
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
12
Timing of Power-Up Power-Down
Waveform of Read Cycles
(5)
NOTES:
1. Timing depends on which signal is asserted last, OE, CE or BEn.
2. Timing depends on which signal is de-asserted first CE, OE or BEn.
3. t
BDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last t
AOE, tACE, tAA or tBDD.
5. SEM = V
IH.
t
RC
R/W
CE
ADDR
t
AA
OE
BEn
4869 drw 06
(4)
t
ACE
(4)
t
AOE
(4)
t
ABE
(4)
(1)
t
LZ
t
OH
(2)
t
HZ
(3,4)
t
BDD
DATA
OUT
BUSY
OUT
VALID DATA
(4)
.
CE
4869 drw 07
t
PU
I
CC
I
SB
t
PD
50% 50%
.

70V658S10BC

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM
Lifecycle:
New from this manufacturer.
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