7
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
NOTES:
1. "H" = V
IH, "L" = VIL, "X" = Don't Care.
2. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table I—Read/Write and Enable Control
(1,2)
OE SEM CE
0
CE
1
BE
3
BE
2
BE
1
BE
0
R/W
Byte 3
I/O
27-3 5
Byte 2
I/O
18-26
Byte 1
I/O
9-17
Byte 0
I/O
0-8
MODE
X H H X X X X X X High-Z High-Z High-Z High-Z Deselected–Power Down
X H X L X X X X X High-Z High-Z High-Z High-Z Deselected–Power Down
X H L H H H H H X High-Z High-Z High-Z High-Z All Bytes Deselected
X H L H H H H L L High-Z High-Z High-Z D
IN
Write to Byte 0 Only
X H L H H H L H L High-Z High-Z D
IN
High-Z Write to Byte 1 Only
XHLHHLHHLHigh-Z D
IN
High-Z High-Z Write to Byte 2 Only
XHLHLHHHL D
IN
High-Z High-Z High-Z Write to Byte 3 Only
X H L H H H L L L High-Z High-Z D
IN
D
IN
Write to Lower 2 Bytes Only
XHLHLLHHL D
IN
D
IN
High-Z High-Z Write to Upper 2 bytes Only
XHLHLLLLL D
IN
D
IN
D
IN
D
IN
Write to All Bytes
L H L H H H H L H High-Z High-Z High-Z D
OUT
Read Byte 0 Only
LHLHHHLHHHigh-ZHigh-ZD
OUT
High-Z Read Byte 1 Only
LHLHHLHHHHigh-ZD
OUT
High-Z High-Z Read Byte 2 Only
LHLHLHHHHD
OUT
High-Z High-Z High-Z Read Byte 3 Only
L H L H H H L L H High-Z High-Z D
OUT
D
OUT
Read Lower 2 Bytes Only
LHLHLLHHHD
OUT
D
OUT
High-Z High-Z Read Upper 2 Bytes Only
LHLHLLLLHD
OUT
D
OUT
D
OUT
D
OUT
Read All Bytes
H H L H L L L L X High-Z High-Z High-Z High-Z Outputs Disabled
4869 tbl 02
Truth Table II – Semaphore Read/Write Control
(1)
NOTES:
1. There are eight semaphore flags written to I/O
0 and read from all the I/Os (I/O0-I/O35). These eight semaphore flags are addressed by A0-A2.
2. CE = L occurs when CE
0 = VIL and CE1 = VIH.
3. Each byte is controlled by the respective BEn. To read data BEn = V
IL.
Inputs
(1 )
Outputs
Mode
CE
(2 )
R/W
OE BE
3
BE
2
BE
1
BE
0
SEM
I/O
1-3 5
I/O
0
HHLLLLLLDATA
OUT
DATA
OUT
Read Data in Semaphore Flag
(3)
H
XXXXL L XDATA
IN
Write I/O
0
into Semaphore Flag
LXXXXXX L
______ ______
Not Allowed
4869 tbl 03
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
8
Absolute Maximum Ratings
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. V
TERM must not exceed VDD + 150mV for more than 25% of the cycle time
or 4ns maximum, and is limited to
< 20mA for the period of VTERM > VDD
+ 150mV.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Symbol Rating Commercial
& Industrial
Unit
V
TERM
(2)
(V
DD
)
V
DD
Terminal Voltage
with Respect to GND
-0.5 to + 4.6 V
T
BIAS
(3)
Temperature Under Bias -55 to +125
o
C
T
STG
Storage Temperature -65 to +150
o
C
T
JN
Junction Temperature +150
o
C
I
OUT
(For V
DDQ
=
3.3V) DC Output Current 50 mA
I
OUT
(For V
DDQ
=
2.5V) DC Output Current 40 mA
4869 tbl 05
Recommended DC Operating
Conditions with V
DDQ at 3.3V
NOTES:
1. V
IL > -1.5V for pulse width less than 10 ns.
2. V
TERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
DD (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 3.15 3.3 3.45 V
V
DDQ
I/O Supply Voltage
(3)
3.15 3.3 3.45 V
V
SS
Ground 0 0 0 V
V
IH
Input High Voltage
(Address & Control Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IL
Input Low Voltage -0.3
(1)
____
0.8 V
4869 tbl 07
Recommended DC Operating
Conditions with V
DDQ at 2.5V
NOTES:
1. V
IL > -1.5V for pulse width less than 10 ns.
2. V
TERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
SS (0V), and VDDQX for that port must be
supplied as indicated above.
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 3.15 3.3 3.45 V
V
DDQ
I/O Supply Voltage
(3)
2.4 2.5 2.6 V
V
SS
Ground 0 0 0 V
V
IH
Input High Voltage
(3 )
(Address & Control Inputs)
1.7
____
V
DDQ
+ 100mV
(2 )
V
V
IH
Input High Voltage - I/O
(3 )
1.7
____
V
DDQ
+ 100mV
(2 )
V
V
IL
Input Low Voltage -0.5
(1 )
____
0.7 V
4869 tbl 06
Maximum Operating
Temperature and Supply Voltage
(1)
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature GND V
DD
Commercial 0
O
C to +70
O
C0V3.3V
+
150mV
Industrial -40
O
C to +85
O
C0V3.3V
+
150mV
4869 tbl 04
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C
OUT also references CI/O.
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol Parameter Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 0V 8 pF
C
OUT
(2)
Output Capacitance V
OUT
= 0V 10.5 pF
4869 tbl 08
9
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VDD = 3.3V ± 150mV)
NOTE:
1. At V
DD < - 2.0V input leakages are undefined.
2. V
DDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details.
Symbol Parameter Test Conditions
70V659/58/57S
UnitMin. Max.
|I
LI
| Input Leakage Current
(1 )
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
10 µA
|I
LO
| Output Leakage Current
CE
0
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
10 µA
V
OL
(3.3V) Output Low Voltage
(2 )
I
OL
= +4mA, V
DDQ
= Min.
___
0.4 V
V
OH
(3.3V) Output High Voltage
(2)
I
OH
= -4mA, V
DDQ
= Min. 2.4
___
V
V
OL
(2.5V) Output Low Voltage
(2 )
I
OL
= +2mA, V
DDQ
= Min.
___
0.4 V
V
OH
(2.5V) Output High Voltage
(2)
I
OH
= -2mA, V
DDQ
= Min. 2.0
___
V
4869 tbl 09
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(3)
(VDD = 3.3V ± 150mV)
NOTES:
1. At f = f
MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V
DD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).
5. CE
X = VIL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQ - 0.2V
CE
X > VDDQ - 0.2V means CE0X > VDDQ - 0.2V or CE1X - 0.2V
"X" represents "L" for left port or "R" for right port.
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Symbol Parameter Test Condition Version Typ.
(4)
Max. Typ.
(4)
Max. Typ.
(4)
Max. Unit
I
DD
Dynamic Operating
Current (Both
Ports Active)
CE
L
and CE
R
= V
IL
,
Outputs Disabled
f = f
MAX
(1)
COM'L S 340 500 315 465 300 440
mA
IND S
____ ____
365 515 350 490
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
= CE
R
= V
IH
f = f
MAX
(1)
COM'L S 115 165 90 125 75 100
mA
IND S
____ ____
115 150 100 125
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(1)
COM'L S 225 340 200 325 175 315
mA
IND S
____ ____
225 365 200 350
I
SB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports CE
L
and
CE
R
> V
DDQ
- 0.2V,
V
IN
> V
DDQ
- 0.2V or V
IN
< 0.2V,
f = 0
(2)
COM'LS315315315
mA
IND S
____ ____
615615
I
SB4
Full Standby Current
(One Port - CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
DDQ
- 0.2V
(5)
V
IN
> V
DDQ
- 0.2V or V
IN
< 0.2V,
Active Port, Outputs Disabled,
f = f
MAX
(1)
COM'L S 220 335 195 320 170 310
mA
IND S
____ ____
220 360 195 345
4869 tbl 10

70V658S12BCI

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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