USBLC6-4SC6 Datasheet USBLC6-4SC6 | P1-P3

This is information on a product in full production.

November 2015 DocID11068 Rev 7 1/13

USBLC6-4

Very low capacitance ESD protection

Datasheet

production data

Figure 1. Functional diagram

Features

• 4 data-line protection

• Protects V

BUS

• Very low capacitance: 3 pF typ.

• Peak pulse power (8/20 µs): 130 W typ.

• SOT23-6L package

• RoHS compliant

Benefits

• Very low capacitance between lines to GND for

optimized data integrity and speed

• Low PCB space consumption, 9 mm²

maximum foot print

• Enhanced ESD protection: IEC 61000-4-2

level 4 compliance guaranteed at device level,

hence greater immunity at system level

• ESD protection of V

BUS

: allows ESD current

flowing to ground when ESD event occurs on

data line

• High reliability offered by monolithic integration

• Low leakage current for longer operation of

battery powered devices

• Fast response time

• Consistent D+ / D- signal balance:

– Best capacitance matching tolerance

I/O to GND = 0.015 pF

– Compliant with USB 2.0 requirements

< 1 pF

Complies with the following standards

• IEC 61000-4-2 level 4:

– 15 kV (air discharge)

– 8 kV (contact discharge)

Applications

• USB 2.0 ports up to 480 Mb/s (high speed)

• Backwards compatible with USB 1.1 low and

full speed

• Ethernet port: 10/100 Mb/s

• SIM card protection

• Video line protection

• Portable electronics

Description

The USBLC6-4 is a monolithic application specific

device dedicated to ESD protection of high speed

interfaces, such as USB 2.0, Ethernet links and

video lines.

Its very low line capacitance secures a high level

of signal integrity without compromising in

protecting sensitive chips against the most

stringent characterized ESD strikes.

SOT23-6L

I/O1 I/O4

GND V

BUS

I/O2 I/O3

www.st.com

Characteristics USBLC6-4

2/13 DocID11068 Rev 7

1 Characteristics

Table 1. Absolute ratings

Symbol Parameter Value Unit

Peak pulse voltage

IEC 61000-4-2 air discharge

IEC 61000-4-2 contact discharge

MIL STD883C-Method 3015-6

stg

Storage temperature range -55 to +150 °C

Operating junction temperature range -40 to +125 °C

Lead solder temperature (10 seconds duration) 260 °C

Table 2. Electrical characteristics (T

amb

= 25 °C)

Symbol Parameter Test Conditions

Value

Unit

Min. Typ. Max.

Leakage current V

= 5.25 V 10 150 nA

Breakdown voltage

between V

BUS

and GND

= 1 mA 6 10 V

Forward voltage I

= 10 mA 0.86 V

Clamping voltage

= 1 A, 8/20 µs

Any I/O pin to GND

12 V

= 5 A, 8/20 µs

Any I/O pin to GND

17 V

i/o-GND

Capacitance between I/O

and GND

= 1.65 V 3 4

ΔC

i/o-GND

0.015

i/o-i/o

Capacitance between I/O V

= 1.65 V 1.85 2.7

ΔC

i/o-i/o

0.04

DocID11068 Rev 7 3/13

USBLC6-4 Characteristics

Figure 2. Capacitance versus voltage

(typical values)

Figure 3. Line capacitance versus frequency

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

C(pF)

F=1MHz

V =30mV

T=25°C

OSC RMS

C=I/O-I/O

C =I/O-GND

Data line voltage (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1 10 100 1000

C(pF)

V =30mV

T=25°C

OSC RMS

V =1.65V

F(MHz)

V =0V

Figure 4. Relative variation of leakage current

versus junction temperature (typical values)

Figure 5. Frequency response

100

25 50 75 100 125

T (°C)

V =5V

BUS

I[T

RM j

] / I [T

RM j

=25°C]

100.0k

1.0M

10.0M

100.0M

1.0G

-20.00

-15.00

-10.00

-5.00

0.00

S21(dB)

F(Hz)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

USBLC6-4SC6

Mfr. #:

Buy USBLC6-4SC6

Manufacturer:

STMicroelectronics

Description:

TVS Diodes / ESD Suppressors Low Cap ESD Protect

Lifecycle:

New from this manufacturer.

Delivery:

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Products related to this Datasheet

USBLC6-4SC6