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APTGT30TL601G

P1-P3P4-P6P7-P8
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi.com
1-8
Q1 to Q4 Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600
V
T
C
= 25°C
50
I
C
Continuous Collector Current
T
C
= 80°C
30
I
CM
Pulsed Collector Current T
C
= 25°C 60
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
90 W
RBSOA Reverse Bias Safe Operating Area
T
J
= 150°C
60A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
V
CES
= 600V
I
C
= 30A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT3
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT3
Power Module
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi.com
2-8
All ratings @ T
j
= 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 600V 250 µA
T
j
= 25°C 1.5 1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 30A
T
j
= 150°C 1.7
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 400µA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 300 nA
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 1600
C
oes
Output Capacitance 110
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
50
pF
Q
G
Gate charge
V
GE
=±15V, I
C
=30A
V
CE
=300V
0.3 µC
T
d(on)
Turn-on Delay Time 110
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 200
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 30A
R
G
= 10
40
ns
T
d(on)
Turn-on Delay Time 120
T
r
Rise Time 50
T
d(off)
Turn-off Delay Time 250
T
f
Fall Time
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 30A
R
G
= 10
60
ns
T
j
= 25°C 0.16
E
on
Turn-on Switching Energy
T
j
= 150°C 0.3
mJ
T
j
= 25°C 0.7
E
off
Turn-off Switching Energy
V
GE
= ±15V
V
Bus
= 300V
I
C
= 30A
R
G
= 10
T
j
= 150°C 1.05
mJ
I
sc
Short Circuit data
V
GE
≤15V ; V
Bus
= 360V
t
p
≤ 6µs ; T
j
= 150°C
150 A
R
thJC
Junction to Case Thermal Resistance
1.6
°C/W
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi.com
3-8
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 150
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 150°C 350
µA
I
F
DC Forward Current
Tc = 80°C 20 A
T
j
= 25°C 1.6 2
V
F
Diode Forward Voltage
I
F
= 20A
V
GE
= 0V
T
j
= 150°C 1.5
V
T
j
= 25°C 100
t
rr
Reverse Recovery Time
T
j
= 150°C 150
ns
T
j
= 25°C 1.1
Q
rr
Reverse Recovery Charge
T
j
= 150°C 2.3
µC
T
j
= 25°C 0.23
E
rr
Reverse Recovery Energy
I
F
= 20A
V
R
= 300V
di/dt =1600A/µs
T
j
= 150°C 0.50
mJ
R
thJC
Junction to Case Thermal Resistance
3.25 °C/W
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 150
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 150°C 350
µA
I
F
DC Forward Current
Tc = 80°C 30 A
T
j
= 25°C 1.6 2
V
F
Diode Forward Voltage
I
F
= 30A
V
GE
= 0V
T
j
= 150°C 1.5
V
T
j
= 25°C 100
t
rr
Reverse Recovery Time
T
j
= 150°C 150
ns
T
j
= 25°C 1.5
Q
rr
Reverse Recovery Charge
T
j
= 150°C 3.1
µC
T
j
= 25°C 0.34
E
rr
Reverse Recovery Energy
I
F
= 30A
V
R
= 300V
di/dt =1800A/µs
T
j
= 150°C 0.75
mJ
R
thJC
Junction to Case Thermal Resistance
2.45 °C/W
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 175
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight
80
g
P1-P3P4-P6P7-P8

APTGT30TL601G

Mfr. #:
Buy APTGT30TL601G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC8073
Lifecycle:
New from this manufacturer.
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