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APTGT30TL601G
P1-P3
P4-P6
P7-P8
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi
.com
4-8
SP1 Package outline
(d
imen
sions in
mm)
See application note 1904 - Mounting Instructions
for SP1 Power Modules
on www.
microsemi.com
Q1 to Q4
Typical performa
nce curve
Ha
r
d
sw
i
tch
in
g
0
20
40
60
80
0
1
02
0
3
04
0
I
C
(A)
Fmax
, Oper
ati
ng Fre
quency
(kHz)
V
CE
=300V
D
=50%
R
G
=1
0
Ω
T
J
=1
50
°
C
T
c
=85°
C
O
pe
r
at
in
g
F
r
e
q
u
e
n
cy vs
Co
lle
ct
o
r
Cu
r
r
e
nt
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi
.com
5-8
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=150°C
0
10
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
10
20
30
40
50
60
00
.
511
.
522
.
533
.
5
V
CE
(V)
I
C
(A)
T
J
= 150°C
Transfert Characteristics
T
J
=25°C
T
J
=25°C
T
J
=150°C
0
10
20
30
40
50
60
56789
1
0
1
1
1
2
V
GE
(V)
I
C
(A)
Energy
losses vs Collector Current
Eon
Eoff
0
0.5
1
1.5
2
0
1
02
03
0
4
05
06
0
I
C
(A
)
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 10
Ω
T
J
= 150°C
Eon
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
1
02
03
04
05
06
07
0
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 30A
T
J
= 150°C
Switchi
ng Energy
Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
700
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=150°C
R
G
=10
Ω
maximum E
ffective Transient Thermal Impedance, Junctio
n to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Durati
on in Seconds
Thermal Im
pedance (°C/W)
APTGT30TL601G
APTGT30TL601G – Rev1 October, 2012
www.microsemi
.com
6-8
CR1 to CR4
Typica
l perfor
mance c
urve
Energy
losses vs Collector Current
0
0.2
0.4
0.6
0.8
0
1
02
03
04
0
I
F
(A
)
E (mJ)
V
CE
= 300V
R
G
= 12
Ω
T
J
= 150°C
0
0.125
0.25
0.375
0.5
10
30
50
70
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
I
C
= 20A
T
J
= 150°C
Switching
Energy
Losses vs Gate Resistance
Forward C
harac
terist
ic of diode
T
J
=25°C
T
J
=150°C
0
5
10
15
20
25
30
35
40
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
F
(A)
maximum
Effective Transient Thermal Imp
edance, Junction to Case vs Pulse Dur
ation
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
3.5
0.00001
0.0001
0.001
0.01
0.
1
1
10
Rectangular Pulse Durati
on in Seconds
Thermal
Impedance
(°C/W)
P1-P3
P4-P6
P7-P8
APTGT30TL601G
Mfr. #:
Buy APTGT30TL601G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC8073
Lifecycle:
New from this manufacturer.
Delivery:
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