NXP Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA
• Dual diode V
R
= 600 V
• Extremely fast switching
• Low reverse recovery current V
F
≤ 1.75 V
• Low thermal resistance
• Reduces switching losses in I
O(AV)
= 10 A
associated MOSFET
t
rr
= 19 ns (typ)
APPLICATIONS PINNING SOT78 (TO220AB)
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 anode 1
mode power supplies.
2 cathode
The BYC10-600CT is supplied in
the SOT78 (TO220AB) 3 anode 2
conventional leaded package.
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
Peak repetitive reverse voltage - 600 V
V
RWM
Crest working reverse voltage - 600 V
V
R
Continuous reverse voltage T
mb
≤ 110 ˚C - 500 V
I
O(AV)
Average output current (both δ = 0.5; with reapplied V
RRM(max)
; - 10 A
diodes conducting) T
mb
≤ 50 ˚C
1
I
FRM
Repetitive peak forward current δ = 0.5; with reapplied V
RRM(max)
; - 10 A
per diode T
mb
≤ 50 ˚C
1
I
FSM
Non-repetitive peak forward t = 10 ms - 40 A
current per diode t = 8.3 ms - 44 A
sinusoidal; T
j
= 150˚C prior to surge
with reapplied V
RWM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to per diode - - 2.5 K/W
mounting base both diodes - - 2.2 K/W
R
th j-a
Thermal resistance junction to in free air. - 60 - K/W
ambient
k
a1
a2
13
2
123
tab
1 T
mb(max)
limited by thermal runaway
March 2001 1 Rev 1.200
