1;3 Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
Fig.3. Maximum forward dissipation per diode as a
function of average forward current; rectangular
current waveform where I
F(AV)
=I
F(RMS)
x √D.
Fig.4. Typical reverse recovery switching losses per
diode, as a function of rate of change of current dI
F
/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr
, per diode as a
function of rate of change of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current per
diode, I
rrm
as a function of rate of change of current
dI
F
/dt.
012345678
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYC5-600
Rs = 0.09 Ohms
Vo = 1.3 V
150
137.5
125
112.5
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
D =
t
p
t
p
T
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100 1000
0
0.05
0.1
0.15
0.2
BYC5-600
f = 20 kHz
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
10 A
7.5 A
Tj = 125 C
VR = 400 V
100 1000
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
10 A
7.5 A
IF = 5 A
Tj = 125 C
VR = 400 V
100 1000
0
1
2
3
4
5
BYC5-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
VR = 400 V
IF = 5 A
7.5 A
10 A
100 1000
1
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
10 A
March 2001 3 Rev 1.200
