13
FN9003.3
February 11, 2005
copper filled polygons on the top and bottom circuit layers for
the phase nodes. Use the remaining printed circuit layers for
small signal wiring. The wiring traces from the driver IC to the
MOSFET gate and source should be sized to carry at least
one ampere of current.
Component Selection Guidelines
Output Capacitor Selection
The output capacitor is selected to meet both the dynamic
load requirements and the voltage ripple requirements. The
load transient for the microprocessor CORE is characterized
by high slew rate (di/dt) current demands. In general,
multiple high quality capacitors of different size and dielectric
are paralleled to meet the design constraints.
Modern microprocessors produce severe transient load rates.
High frequency capacitors supply the initially transient current
and slow the load rate-of-change seen by the bulk capacitors.
The bulk filter capacitor values are generally determined by
the ESR (effective series resistance) and voltage rating
requirements rather than actual capacitance requirements.
High frequency decoupling capacitors should be placed as
close to the power pins of the load as physically possible. Be
careful not to add inductance in the circuit board wiring that
could cancel the usefulness of these low inductance
components. Consult with the manufacturer of the load on
specific decoupling requirements.
Use only specialized low-ESR capacitors intended for
switching-regulator applications for the bulk capacitors. The
bulk capacitor’s ESR determines the output ripple voltage
and the initial voltage drop following a high slew-rate
transient’s edge. In most cases, multiple capacitors of small
case size perform better than a single large case capacitor.
Bulk capacitor choices include aluminum electrolytic, OS-
Con, Tantalum and even ceramic dielectrics. An aluminum
electrolytic capacitor’s ESR value is related to the case size
with lower ESR available in larger case sizes. However, the
equivalent series inductance (ESL) of these capacitors
increases with case size and can reduce the usefulness of
the capacitor to high slew-rate transient loading.
Unfortunately, ESL is not a specified parameter. Consult the
capacitor manufacturer and measure the capacitor’s
impedance with frequency to select a suitable component.
Output Inductor Selection
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Small inductors in a multi-phase converter reduces
the response time without significant increases in total ripple
current.
The output inductor of each power channel controls the
ripple current. The control IC is stable for channel ripple
current (peak-to-peak) up to twice the average current. A
single channel’s ripple current is approximately:
The current from multiple channels tend to cancel each other
and reduce the total ripple current. Figure 12 gives the total
ripple current as a function of duty cycle, normalized to the
parameter at zero duty cycle. To determine
the total ripple current from the number of channels and the
duty cycle, multiply the y-axis value by .
Small values of output inductance can cause excessive
power dissipation. The ISL6554 is designed for stable
operation for ripple currents up to twice the load current.
However, for this condition, the RMS current is 115% above
the value shown in the following MOSFET Selection and
Considerations section. With all else fixed, decreasing the
inductance could increase the power dissipated in the
MOSFETs by 30%.
50 10010 20 200 500 1,000 5,000 10,0002,000
1
2
5
10
20
50
100
200
500
1,000
R
T
(k)
CHANNEL OSCILLATOR FREQUENCY, F
SW
(kHz)
FIGURE 10. RESISTANCE R
T
vs FREQUENCY
I
V
IN
V
OUT
F
SW
L
--------------------------------
V
OUT
V
IN
----------------
=
VoLxF
SW

VoLxF
SW

1.0
0.8
0.6
0.4
0.2
0
0
0.1 0.2 0.3 0.4 0.5
DUTY CYCLE (V
O
/V
IN
)
RIPPLE CURRENT (A
PEAK-PEAK
)
V
O
/ (L
X
F
SW
)
SINGLE
CHANNEL
2 CHANNEL
3 CHANNEL
4 CHANNEL
FIGURE 11. RIPPLE CURRENT vs DUTY CYCLE
ISL6554
14
FN9003.3
February 11, 2005
Input Capacitor Selection
The important parameters for the bulk input capacitors are the
voltage rating and the RMS current rating. For reliable
operation, select bulk input capacitors with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum input
voltage and a voltage rating of 1.5 times is a conservative
guideline. The RMS current required for a multi-phase
converter can be approximated with the aid of Figure 13.
First determine the operating duty ratio as the ratio of the
output voltage divided by the input voltage. Find the Current
Multiplier from the curve with the appropriate power
channels. Multiply the current multiplier by the full load
output current. The resulting value is the RMS current rating
required by the input capacitor.
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use ceramic capacitance for
the high frequency decoupling and bulk capacitors to supply
the RMS current. Small ceramic capacitors should be placed
very close to the drain of the upper MOSFET to suppress the
voltage induced in the parasitic circuit impedances.
For bulk capacitance, several electrolytic capacitors (Panasonic
HFQ series or Nichicon PL series or Sanyo MV-GX or
equivalent) may be needed. For surface mount designs, solid
tantalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rating.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection and Considerations
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components; conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty factor (see the following
equations). The conduction losses are the main component
of power dissipation for the lower MOSFETs, Q2 and Q4 of
Figure 1. Only the upper MOSFETs, Q1 and Q3 have
significant switching losses, since the lower device turns on
and off into near zero voltage.
The equations assume linear voltage-current transitions and
do not model power loss due to the reverse-recovery of the
lower MOSFETs body diode. The gate-charge losses are
dissipated by the Driver IC and don’t heat the MOSFETs.
However, large gate-charge increases the switching time,
V
CORE
+12V
VIA CONNECTION TO GROUND PLANE
ISLAND ON POWER PLANE LAYER
ISLAND ON CIRCUIT PLANE LAYER
L
O1
C
OUT
C
IN
+5V
IN
KEY
PHASE
VCC
USE INDIVIDUAL METAL RUNS
COMP
ISL6554
PWM
R
T
R
IN
R
FB
C
BP
FB
VSEN
ISEN
R
SEN
HIP6601
C
BOOT
C
BP
C
T
VCC
FS/DIS
PVCC
LOCATE NEXT TO IC PIN
LOCATE NEXT
TO FB PIN
LOCATE NEXT TO IC PIN(S)
ISOLATE OUTPUT STAGES
FOR EACH CHANNEL TO HELP
LOCATE NEAR TRANSISTOR
FIGURE 12. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS
0.5
0.4
0.3
0.2
0.1
0
0
0.1 0.2 0.3 0.4 0.5
DUTY CYCLE (V
O
/V
IN
)
CURRENT MULTIPLIER
SINGLE
CHANNEL
3 CHANNEL
4 CHANNEL
2 CHANNEL
FIGURE 13. CURRENT MULTIPLIER vs DUTY CYCLE
ISL6554
15
FN9003.3
February 11, 2005
t
SW
which increases the upper MOSFET switching losses.
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
A diode, anode to ground, may be placed across Q2 and Q4
of Figure 1. These diodes function as a clamp that catches
the negative inductor swing during the dead time between
the turn off of the lower MOSFETs and the turn on of the
upper MOSFETs. The diodes must be a Schottky type to
prevent the lossy parasitic MOSFET body diode from
conducting. It is usually acceptable to omit the diodes and let
the body diodes of the lower MOSFETs clamp the negative
inductor swing, but efficiency could drop one or two percent
as a result. The diode’s rated reverse breakdown voltage
must be greater than the maximum input voltage.
References
Intersil documents are available on the web at
www.intersil.com/
[1] HIP6601/HIP6603 Data Sheet, Intersil Corporation,
File No. 4819
[2] HIP6602 Data Sheet, Intersil Corporation, File No. 4838
P
UPPER
I
O
2
r
DS ON
V
OUT
V
IN
------------------------------------------------------------
I
O
V
IN
t
SW
F
SW
2
----------------------------------------------------------
+=
P
LOWER
I
O
2
r
DS ON
V
IN
V
OUT

V
IN
---------------------------------------------------------------------------------
=
ISL6554

ISL6554CBZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Switching Controllers 20L 2-4 PHS 0 95V-1 7V VID PWM BUCK CONT
Lifecycle:
New from this manufacturer.
Delivery:
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