Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 4 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 115 K/W
[2] - - 50 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 30 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 6 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
aaa-010427
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.25
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 5 / 15
aaa-010428
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
-1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -80 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -80 V; I
E
= 0 A; T
j
= 150 °C - - -50 µA
I
CES
collector-emitter cut-off
current
V
CE
= -80 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -8 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -1.5 V; I
C
= -500 mA;
T
amb
= 25 °C
[1] 80 160 -
V
CE
= -10 V; I
C
= -500 mA;
T
amb
= 25 °C
[1] 100 180 -
V
CE
= -5 V; I
C
= -1 A; T
amb
= 25 °C [1] 70 150 260
V
CE
= -10 V; I
C
= -1 A; T
amb
= 25 °C [1] 90 160 -
h
FE
DC current gain
V
CE
= -10 V; I
C
= -2 A; T
amb
= 25 °C [1] 20 70 -
I
C
= -0.5 A; I
B
= -50 mA; T
amb
= 25 °C - -75 -130 mVV
CEsat
collector-emitter
saturation voltage
[1] - -300 -500 mV
R
CEsat
collector-emitter
saturation resistance
[1] - 150 250
V
BEsat
base-emitter saturation
voltage
I
C
= -2 A; I
B
= -200 mA; T
amb
= 25 °C
[1] - -1.02 -1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.1 A; T
amb
= 25 °C [1] - -0.67 -0.9 V
t
d
delay time - 20 - ns
t
r
rise time - 190 - ns
t
on
turn-on time - 210 - ns
t
s
storage time - 300 - ns
t
f
fall time - 170 - ns
t
off
turn-off time
V
CC
= -12.5 V; I
C
= -1 A; I
Bon
= -50 mA;
I
Boff
= 50 mA; T
amb
= 25 °C
- 470 - ns
f
T
transition frequency V
CE
= -10 V; I
C
= -100 mA;
f = 100 MHz; T
amb
= 25 °C
- 125 - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 28 - pF
[1] Pulse test: t
p
≤ 300 µs; δ ≤ 0.02

PHPT61002PYCLHX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Bipolar Discretes SOT669
Lifecycle:
New from this manufacturer.
Delivery:
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