Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 7 / 15
aaa-026967
100
200
300
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(3)
(2)
V
CE
= −1 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-026968
-1.0
-1.5
-0.5
-2.0
-2.5
I
C
(A)
0
I
B
= -50 mA
-40
-25
-20
-15
-30
-10
-5
-35
-45
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
aaa-010432
-0.8
-0.4
-1.2
-1.6
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
aaa-010433
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 8 / 15
aaa-026969
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
-4
-10
-3
-1 -10
-2
-10
(2)
(3)
(1)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026970
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
-4
-10
-3
-1 -10
-2
-10
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026971
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
10
-1
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-026972
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
10
-1
(2)
(1)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Nexperia
PHPT61002PYCLH
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYCLH All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 July 2017 9 / 15
11. Test information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 12. BISS transistor switching time definition
Fig. 13. Test circuit for switching times

PHPT61002PYCLHX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Bipolar Discretes SOT669
Lifecycle:
New from this manufacturer.
Delivery:
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